Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition

Inbunden, Engelska, 2016

Av John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael

4 699 kr

Beställningsvara. Skickas inom 10-15 vardagar

Fri frakt för medlemmar vid köp för minst 249 kr.

Finns i fler format (1)

Häftad

2 049 kr

Skickas inom 10-15 vardagar

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Produktinformation

Utgivningsdatum2016-10-18
Mått178 x 254 x 42 mm
Vikt1 723 g
FormatInbunden
SpråkEngelska
Antal sidor643
Upplaga2
FörlagTaylor & Francis Inc
ISBN9781482254358

Tillhör följande kategorier

Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

"Concise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies."— Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary