J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.

• Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

"Concise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies."— Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.

• Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

"Concise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies."— Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.

• Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

"Concise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies."— Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary