The three coeditors, Dr. Cole W. Litton, Dr. Donald C. Reynolds and Dr. Thomas C. Collins, are internationally recognized experts in field of the physics of semiconductors, with an emphasis on the optical, electrical and structural properties and crystal growth of these materials, especially zinc oxide and the other Group II-VI semiconductor materials, as well as the III-V compound semiconductor materials and their electronic and optoelectronic devices. Each of the editors has authored more than 500 scientific/technical papers, book chapters, and technical/scientific books over professional careers that have spanned much of the past 30 to 40 years.

• Series Preface xvPreface viiList of Contributors xxi1 Fundamental Properties of ZnO 1T. C. Collins and R. J. Hauenstein1.1 Introduction 11.1.1 Overview 11.1.2 Organization of Chapter 21.2 Band Structure 21.2.1 Valence and Conduction Bands 21.3 Optical Properties 51.3.1 Free and Bound Excitons 51.3.2 Effects of External Magnetic Field on ZnO Excitons 61.3.3 Strain Field 81.3.4 Spatial Resonance Dispersion 91.4 Electrical Properties 101.4.1 Intrinsic Electronic Transport Properties 101.4.2 n-type Doping and Donor Levels 111.4.3 p-type Doping and Dopability 131.4.4 Schottky Barriers and Ohmic Contacts 171.5 Band Gap Engineering 191.5.1 Homovalent Heterostructures 201.5.2 Heterovalent Heterostructures 221.6 Spintronics 221.7 Summary 25References 252 Optical Properties of ZnO 29D. C. Reynolds, C. W. Litton and T. C. Collins2.1 Introduction 292.2 Free Excitons 292.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO 352.4 Photoluminescence from the Two Polar Faces of ZnO 362.5 Bound-Exciton Complexes in ZnO 382.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 462.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN 512.8 Closely Spaced Donor–Acceptor Pairs in ZnO 552.9 Summary 58References 583 Electrical Transport Properties in Zinc Oxide 61B. Claflin and D. C. Look3.1 Introduction 613.2 Hall-Effect Analysis 623.2.1 Single-Band Conduction 623.2.2 Two-Band Mixed Conduction 653.2.3 Conducting Surface Layers 663.3 Donor States and n-type Doping 663.3.1 Native Point Defects – Donors 683.3.2 Substitutional Donors 693.4 Hydrogen 693.5 Acceptor States and p-type Doping 703.5.1 Native Point Defects – Acceptors 713.5.2 Substitutional Acceptors 723.6 Photoconductivity 763.7 Summary 78References 784 ZnO Surface Properties and Schottky Contacts 87Leonard J. Brillson4.1 Historical Background of Schottky Contacts on ZnO 874.1.1 ZnO Surface Effects 884.1.2 Early Schottky Barrier Studies 904.2 Recent Schottky Barrier Studies 914.2.1 Surface Cleaning in Vacuum 914.2.2 Surface Cleaning Effects on Impurities and Defects 924.3 The Influence of Surface Preparation on Schottky Barriers 934.4 The Influence of Defects on Schottky Barriers 974.5 The Influence of ZnO Polarity on Schottky Barriers 1024.6 The Influence of Chemistry 1034.7 Charge Transport and Extended Metal–ZnO Schottky Barriers 1084.8 Conclusion 110Acknowledgements 110References 1105 Native Point Defects and Doping in ZnO 113Anderson Janotti and Chris G. Van de Walle5.1 Introduction 1135.2 Theoretical Framework 1145.3 Native Point Defects 1155.3.1 Oxygen Vacancies 1175.3.2 Zinc Interstitials 1195.3.3 Zinc Antisites 1205.3.4 Zinc Vacancies 1215.3.5 Defect Migration 1215.4 Donor Impurities 1255.4.1 Aluminum, Gallium and Indium 1255.4.2 Fluorine 1255.4.3 Hydrogen 1255.5 Acceptor Impurities 1295.5.1 Lithium 1295.5.2 Copper 1295.5.3 Nitrogen 1295.5.4 Phosphorous, Arsenic and Antimony 1305.5.5 Co-Doping 1305.6 Isoelectronic Impurities 131Acknowledgements 131References 1316 Spectral Identification of Impurities and Native Defects in ZnO 135B.K. Meyer, D.M. Hofmann, J. Stehr and A. Hoffmann6.1 Introduction 1356.2 Optical Spectroscopy 1366.2.1 Excitons Bound to Shallow Donors 1366.2.2 Recombinations Caused by Nitrogen and Arsenic Doping 1456.3 Magnetic Resonance Investigations 1536.3.1 Shallow Donors 1546.3.2 Deep Level Defects 1586.3.3 Extrinsic Acceptors: Li, Na and N 1616.3.4 Intrinsic Acceptors 166References 1667 Vapor Transport Growth of ZnO Substrates and Homoepitaxy of ZnO Device Layers 171Gene Cantwell, Jizhi Zhang and J.J. Song7.1 Introduction 1717.2 Transport Theory and Comparison with Growth Data 1727.3 Characterization 1757.3.1 Crystallinity 1757.3.2 Purity 1767.3.3 Electrical 1777.3.4 Optical 1787.4 In-situ Doping 1807.5 ZnO Homoepitaxy 1817.5.1 Substrate Preparation 1827.5.2 Homoepitaxial Films on c-plane SCVT ZnO Substrates 1837.5.3 ZnO Homoepitaxial Films on a-plane SCVT ZnO Substrates 1857.6 Summary 185Acknowledgement 186References 1868 Growth Mechanisms and Properties of Hydrothermal ZnO 189M. J. Callahan, Dirk Ehrentraut, M. N. Alexander and Buguo Wang8.1 Introduction 1898.2 Overview of Hydrothermal Solution Growth 1908.3 Thermodynamics of Hydrothermal Growth of ZnO 1908.3.1 Solubility of ZnO in Various Aqueous Media 1908.3.2 ZnO Phase Stability in H2O System 1918.4 Hydrothermal Growth Techniques 1948.4.1 Hydrothermal Growth of ZnO Powder 1948.4.2 Hydrothermal Crystal Growth of ZnO Single Crystals 1948.4.3 Industrial Growth of Large ZnO Crystals 1978.5 Growth Kinetics of Hydrothermal ZnO 2008.5.1 Crystallographic Structure of Hydrothermal ZnO 2008.5.2 Growth Rates of the Crystallographic Facets of Hydrothermal ZnO 2008.6 Properties of Bulk Hydrothermal ZnO 2058.6.1 Extended Imperfections (Dislocations, Voids, etc.) and Surface Studies 2058.6.2 Impurities 2088.6.3 Electrical Properties 2108.6.4 Optical Properties 2138.6.5 Etching and Polishing 2158.7 Conclusion 217Acknowledgements 217References 2189 Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO-Based Hybrid Devices 221Ryoko Shimada and Hadis Morkoç9.1 Introduction 2219.2 Growth of GaN/ZnO 2229.3 Compositional Analysis 2309.4 Structural Analysis 2329.5 Surface Studies 2359.6 Optical Properties 2379.6.1 Transmission Analysis 2379.6.2 Cathodoluminescence Analysis 2399.6.3 Photoluminescence Analysis 2429.7 Electrical Properties 2499.8 GaN/ZnO Hybrid Devices 2529.8.1 Hybrid ZnO/GaN Heterojunction LED 2539.8.2 ZnO-based Hybrid Microcavity 2599.9 Conclusions 261Acknowledgements 262References 26210 Room Temperature Stimulated Emission and ZnO-Based Lasers 265D.M. Bagnall10.1 Introduction 26510.2 Emission Mechanisms 26610.3 Stimulated Emission 26710.3.1 Bulk ZnO 26710.3.2 Epitaxial Layers 26710.3.3 Quantum wells and Superlattices 27010.3.4 ZnMgO/ZnO Structures 27010.3.5 ZnO/ZnCdO Structures 27210.4 Zinc Oxide Lasers 27410.4.1 Introduction 27410.4.2 Microstructural Lasers 27510.4.3 Powder Lasers 27810.4.4 Nanowire Lasers 27910.4.5 ZnO Laser Diodes 28010.5 Conclusions 281References 28211 ZnO-Based Ultraviolet Detectors 285Jian Zhong and Yicheng Lu11.1 Introduction 28511.2 Photoconductivity in ZnO 28811.2.1 Persistent Photoconductivity 29311.2.2 Negative Photoconductivity 29511.3 ZnO Film-Based UV Photodetectors 29711.3.1 Photoconductive UV Detector 29711.3.2 Schottky Barrier UV Photodetectors 30111.3.3 Integrated Surface Acoustic Wave and Photoconductive Wireless UV Detectors 30511.3.4 Photodetectors Using ZnO TFT 31411.3.5 MgXZn1-XO Uv Photodetector 31511.4 ZnO NW UV Photodetectors 31811.4.1 Photoconductive Gain in a ZnO NW 31811.4.2 Noise Characteristics of ZnO NW UV Photodetector 32311.5 Conclusions 325Acknowledgements 325References 32612 Room-Temperature Stimulated Emission from ZnO Multiple Quantum Wells Grown on Lattice-Matched Substrates 331Takayuki Makino, Yusaburo Segawa, Masashi Kawasaki and Hideomi Koinuma12.1 Introduction 33112.2 Experimental Details 33312.3 Quantum Confinement Effect of Excitons in QWs 33312.4 Exciton–Phonon Interaction in QWs 33612.5 The Localization Mechanism of the Exciton in a QW 33712.6 Time-Resolved Luminescence in ZnO QWs 34112.7 Stimulated Emission in MQWs 34212.8 Summary 346Acknowledgements 347References 347Index 351

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The three coeditors, Dr. Cole W. Litton, Dr. Donald C. Reynolds and Dr. Thomas C. Collins, are internationally recognized experts in field of the physics of semiconductors, with an emphasis on the optical, electrical and structural properties and crystal growth of these materials, especially zinc oxide and the other Group II-VI semiconductor materials, as well as the III-V compound semiconductor materials and their electronic and optoelectronic devices. Each of the editors has authored more than 500 scientific/technical papers, book chapters, and technical/scientific books over professional careers that have spanned much of the past 30 to 40 years.

• Series Preface xvPreface viiList of Contributors xxi1 Fundamental Properties of ZnO 1T. C. Collins and R. J. Hauenstein1.1 Introduction 11.1.1 Overview 11.1.2 Organization of Chapter 21.2 Band Structure 21.2.1 Valence and Conduction Bands 21.3 Optical Properties 51.3.1 Free and Bound Excitons 51.3.2 Effects of External Magnetic Field on ZnO Excitons 61.3.3 Strain Field 81.3.4 Spatial Resonance Dispersion 91.4 Electrical Properties 101.4.1 Intrinsic Electronic Transport Properties 101.4.2 n-type Doping and Donor Levels 111.4.3 p-type Doping and Dopability 131.4.4 Schottky Barriers and Ohmic Contacts 171.5 Band Gap Engineering 191.5.1 Homovalent Heterostructures 201.5.2 Heterovalent Heterostructures 221.6 Spintronics 221.7 Summary 25References 252 Optical Properties of ZnO 29D. C. Reynolds, C. W. Litton and T. C. Collins2.1 Introduction 292.2 Free Excitons 292.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO 352.4 Photoluminescence from the Two Polar Faces of ZnO 362.5 Bound-Exciton Complexes in ZnO 382.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 462.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN 512.8 Closely Spaced Donor–Acceptor Pairs in ZnO 552.9 Summary 58References 583 Electrical Transport Properties in Zinc Oxide 61B. Claflin and D. C. Look3.1 Introduction 613.2 Hall-Effect Analysis 623.2.1 Single-Band Conduction 623.2.2 Two-Band Mixed Conduction 653.2.3 Conducting Surface Layers 663.3 Donor States and n-type Doping 663.3.1 Native Point Defects – Donors 683.3.2 Substitutional Donors 693.4 Hydrogen 693.5 Acceptor States and p-type Doping 703.5.1 Native Point Defects – Acceptors 713.5.2 Substitutional Acceptors 723.6 Photoconductivity 763.7 Summary 78References 784 ZnO Surface Properties and Schottky Contacts 87Leonard J. Brillson4.1 Historical Background of Schottky Contacts on ZnO 874.1.1 ZnO Surface Effects 884.1.2 Early Schottky Barrier Studies 904.2 Recent Schottky Barrier Studies 914.2.1 Surface Cleaning in Vacuum 914.2.2 Surface Cleaning Effects on Impurities and Defects 924.3 The Influence of Surface Preparation on Schottky Barriers 934.4 The Influence of Defects on Schottky Barriers 974.5 The Influence of ZnO Polarity on Schottky Barriers 1024.6 The Influence of Chemistry 1034.7 Charge Transport and Extended Metal–ZnO Schottky Barriers 1084.8 Conclusion 110Acknowledgements 110References 1105 Native Point Defects and Doping in ZnO 113Anderson Janotti and Chris G. Van de Walle5.1 Introduction 1135.2 Theoretical Framework 1145.3 Native Point Defects 1155.3.1 Oxygen Vacancies 1175.3.2 Zinc Interstitials 1195.3.3 Zinc Antisites 1205.3.4 Zinc Vacancies 1215.3.5 Defect Migration 1215.4 Donor Impurities 1255.4.1 Aluminum, Gallium and Indium 1255.4.2 Fluorine 1255.4.3 Hydrogen 1255.5 Acceptor Impurities 1295.5.1 Lithium 1295.5.2 Copper 1295.5.3 Nitrogen 1295.5.4 Phosphorous, Arsenic and Antimony 1305.5.5 Co-Doping 1305.6 Isoelectronic Impurities 131Acknowledgements 131References 1316 Spectral Identification of Impurities and Native Defects in ZnO 135B.K. Meyer, D.M. Hofmann, J. Stehr and A. Hoffmann6.1 Introduction 1356.2 Optical Spectroscopy 1366.2.1 Excitons Bound to Shallow Donors 1366.2.2 Recombinations Caused by Nitrogen and Arsenic Doping 1456.3 Magnetic Resonance Investigations 1536.3.1 Shallow Donors 1546.3.2 Deep Level Defects 1586.3.3 Extrinsic Acceptors: Li, Na and N 1616.3.4 Intrinsic Acceptors 166References 1667 Vapor Transport Growth of ZnO Substrates and Homoepitaxy of ZnO Device Layers 171Gene Cantwell, Jizhi Zhang and J.J. Song7.1 Introduction 1717.2 Transport Theory and Comparison with Growth Data 1727.3 Characterization 1757.3.1 Crystallinity 1757.3.2 Purity 1767.3.3 Electrical 1777.3.4 Optical 1787.4 In-situ Doping 1807.5 ZnO Homoepitaxy 1817.5.1 Substrate Preparation 1827.5.2 Homoepitaxial Films on c-plane SCVT ZnO Substrates 1837.5.3 ZnO Homoepitaxial Films on a-plane SCVT ZnO Substrates 1857.6 Summary 185Acknowledgement 186References 1868 Growth Mechanisms and Properties of Hydrothermal ZnO 189M. J. Callahan, Dirk Ehrentraut, M. N. Alexander and Buguo Wang8.1 Introduction 1898.2 Overview of Hydrothermal Solution Growth 1908.3 Thermodynamics of Hydrothermal Growth of ZnO 1908.3.1 Solubility of ZnO in Various Aqueous Media 1908.3.2 ZnO Phase Stability in H2O System 1918.4 Hydrothermal Growth Techniques 1948.4.1 Hydrothermal Growth of ZnO Powder 1948.4.2 Hydrothermal Crystal Growth of ZnO Single Crystals 1948.4.3 Industrial Growth of Large ZnO Crystals 1978.5 Growth Kinetics of Hydrothermal ZnO 2008.5.1 Crystallographic Structure of Hydrothermal ZnO 2008.5.2 Growth Rates of the Crystallographic Facets of Hydrothermal ZnO 2008.6 Properties of Bulk Hydrothermal ZnO 2058.6.1 Extended Imperfections (Dislocations, Voids, etc.) and Surface Studies 2058.6.2 Impurities 2088.6.3 Electrical Properties 2108.6.4 Optical Properties 2138.6.5 Etching and Polishing 2158.7 Conclusion 217Acknowledgements 217References 2189 Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO-Based Hybrid Devices 221Ryoko Shimada and Hadis Morkoç9.1 Introduction 2219.2 Growth of GaN/ZnO 2229.3 Compositional Analysis 2309.4 Structural Analysis 2329.5 Surface Studies 2359.6 Optical Properties 2379.6.1 Transmission Analysis 2379.6.2 Cathodoluminescence Analysis 2399.6.3 Photoluminescence Analysis 2429.7 Electrical Properties 2499.8 GaN/ZnO Hybrid Devices 2529.8.1 Hybrid ZnO/GaN Heterojunction LED 2539.8.2 ZnO-based Hybrid Microcavity 2599.9 Conclusions 261Acknowledgements 262References 26210 Room Temperature Stimulated Emission and ZnO-Based Lasers 265D.M. Bagnall10.1 Introduction 26510.2 Emission Mechanisms 26610.3 Stimulated Emission 26710.3.1 Bulk ZnO 26710.3.2 Epitaxial Layers 26710.3.3 Quantum wells and Superlattices 27010.3.4 ZnMgO/ZnO Structures 27010.3.5 ZnO/ZnCdO Structures 27210.4 Zinc Oxide Lasers 27410.4.1 Introduction 27410.4.2 Microstructural Lasers 27510.4.3 Powder Lasers 27810.4.4 Nanowire Lasers 27910.4.5 ZnO Laser Diodes 28010.5 Conclusions 281References 28211 ZnO-Based Ultraviolet Detectors 285Jian Zhong and Yicheng Lu11.1 Introduction 28511.2 Photoconductivity in ZnO 28811.2.1 Persistent Photoconductivity 29311.2.2 Negative Photoconductivity 29511.3 ZnO Film-Based UV Photodetectors 29711.3.1 Photoconductive UV Detector 29711.3.2 Schottky Barrier UV Photodetectors 30111.3.3 Integrated Surface Acoustic Wave and Photoconductive Wireless UV Detectors 30511.3.4 Photodetectors Using ZnO TFT 31411.3.5 MgXZn1-XO Uv Photodetector 31511.4 ZnO NW UV Photodetectors 31811.4.1 Photoconductive Gain in a ZnO NW 31811.4.2 Noise Characteristics of ZnO NW UV Photodetector 32311.5 Conclusions 325Acknowledgements 325References 32612 Room-Temperature Stimulated Emission from ZnO Multiple Quantum Wells Grown on Lattice-Matched Substrates 331Takayuki Makino, Yusaburo Segawa, Masashi Kawasaki and Hideomi Koinuma12.1 Introduction 33112.2 Experimental Details 33312.3 Quantum Confinement Effect of Excitons in QWs 33312.4 Exciton–Phonon Interaction in QWs 33612.5 The Localization Mechanism of the Exciton in a QW 33712.6 Time-Resolved Luminescence in ZnO QWs 34112.7 Stimulated Emission in MQWs 34212.8 Summary 346Acknowledgements 347References 347Index 351

Select Guide Rating

The three coeditors, Dr. Cole W. Litton, Dr. Donald C. Reynolds and Dr. Thomas C. Collins, are internationally recognized experts in field of the physics of semiconductors, with an emphasis on the optical, electrical and structural properties and crystal growth of these materials, especially zinc oxide and the other Group II-VI semiconductor materials, as well as the III-V compound semiconductor materials and their electronic and optoelectronic devices. Each of the editors has authored more than 500 scientific/technical papers, book chapters, and technical/scientific books over professional careers that have spanned much of the past 30 to 40 years.

• Series Preface xvPreface viiList of Contributors xxi1 Fundamental Properties of ZnO 1T. C. Collins and R. J. Hauenstein1.1 Introduction 11.1.1 Overview 11.1.2 Organization of Chapter 21.2 Band Structure 21.2.1 Valence and Conduction Bands 21.3 Optical Properties 51.3.1 Free and Bound Excitons 51.3.2 Effects of External Magnetic Field on ZnO Excitons 61.3.3 Strain Field 81.3.4 Spatial Resonance Dispersion 91.4 Electrical Properties 101.4.1 Intrinsic Electronic Transport Properties 101.4.2 n-type Doping and Donor Levels 111.4.3 p-type Doping and Dopability 131.4.4 Schottky Barriers and Ohmic Contacts 171.5 Band Gap Engineering 191.5.1 Homovalent Heterostructures 201.5.2 Heterovalent Heterostructures 221.6 Spintronics 221.7 Summary 25References 252 Optical Properties of ZnO 29D. C. Reynolds, C. W. Litton and T. C. Collins2.1 Introduction 292.2 Free Excitons 292.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO 352.4 Photoluminescence from the Two Polar Faces of ZnO 362.5 Bound-Exciton Complexes in ZnO 382.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 462.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN 512.8 Closely Spaced Donor–Acceptor Pairs in ZnO 552.9 Summary 58References 583 Electrical Transport Properties in Zinc Oxide 61B. Claflin and D. C. Look3.1 Introduction 613.2 Hall-Effect Analysis 623.2.1 Single-Band Conduction 623.2.2 Two-Band Mixed Conduction 653.2.3 Conducting Surface Layers 663.3 Donor States and n-type Doping 663.3.1 Native Point Defects – Donors 683.3.2 Substitutional Donors 693.4 Hydrogen 693.5 Acceptor States and p-type Doping 703.5.1 Native Point Defects – Acceptors 713.5.2 Substitutional Acceptors 723.6 Photoconductivity 763.7 Summary 78References 784 ZnO Surface Properties and Schottky Contacts 87Leonard J. Brillson4.1 Historical Background of Schottky Contacts on ZnO 874.1.1 ZnO Surface Effects 884.1.2 Early Schottky Barrier Studies 904.2 Recent Schottky Barrier Studies 914.2.1 Surface Cleaning in Vacuum 914.2.2 Surface Cleaning Effects on Impurities and Defects 924.3 The Influence of Surface Preparation on Schottky Barriers 934.4 The Influence of Defects on Schottky Barriers 974.5 The Influence of ZnO Polarity on Schottky Barriers 1024.6 The Influence of Chemistry 1034.7 Charge Transport and Extended Metal–ZnO Schottky Barriers 1084.8 Conclusion 110Acknowledgements 110References 1105 Native Point Defects and Doping in ZnO 113Anderson Janotti and Chris G. Van de Walle5.1 Introduction 1135.2 Theoretical Framework 1145.3 Native Point Defects 1155.3.1 Oxygen Vacancies 1175.3.2 Zinc Interstitials 1195.3.3 Zinc Antisites 1205.3.4 Zinc Vacancies 1215.3.5 Defect Migration 1215.4 Donor Impurities 1255.4.1 Aluminum, Gallium and Indium 1255.4.2 Fluorine 1255.4.3 Hydrogen 1255.5 Acceptor Impurities 1295.5.1 Lithium 1295.5.2 Copper 1295.5.3 Nitrogen 1295.5.4 Phosphorous, Arsenic and Antimony 1305.5.5 Co-Doping 1305.6 Isoelectronic Impurities 131Acknowledgements 131References 1316 Spectral Identification of Impurities and Native Defects in ZnO 135B.K. Meyer, D.M. Hofmann, J. Stehr and A. Hoffmann6.1 Introduction 1356.2 Optical Spectroscopy 1366.2.1 Excitons Bound to Shallow Donors 1366.2.2 Recombinations Caused by Nitrogen and Arsenic Doping 1456.3 Magnetic Resonance Investigations 1536.3.1 Shallow Donors 1546.3.2 Deep Level Defects 1586.3.3 Extrinsic Acceptors: Li, Na and N 1616.3.4 Intrinsic Acceptors 166References 1667 Vapor Transport Growth of ZnO Substrates and Homoepitaxy of ZnO Device Layers 171Gene Cantwell, Jizhi Zhang and J.J. Song7.1 Introduction 1717.2 Transport Theory and Comparison with Growth Data 1727.3 Characterization 1757.3.1 Crystallinity 1757.3.2 Purity 1767.3.3 Electrical 1777.3.4 Optical 1787.4 In-situ Doping 1807.5 ZnO Homoepitaxy 1817.5.1 Substrate Preparation 1827.5.2 Homoepitaxial Films on c-plane SCVT ZnO Substrates 1837.5.3 ZnO Homoepitaxial Films on a-plane SCVT ZnO Substrates 1857.6 Summary 185Acknowledgement 186References 1868 Growth Mechanisms and Properties of Hydrothermal ZnO 189M. J. Callahan, Dirk Ehrentraut, M. N. Alexander and Buguo Wang8.1 Introduction 1898.2 Overview of Hydrothermal Solution Growth 1908.3 Thermodynamics of Hydrothermal Growth of ZnO 1908.3.1 Solubility of ZnO in Various Aqueous Media 1908.3.2 ZnO Phase Stability in H2O System 1918.4 Hydrothermal Growth Techniques 1948.4.1 Hydrothermal Growth of ZnO Powder 1948.4.2 Hydrothermal Crystal Growth of ZnO Single Crystals 1948.4.3 Industrial Growth of Large ZnO Crystals 1978.5 Growth Kinetics of Hydrothermal ZnO 2008.5.1 Crystallographic Structure of Hydrothermal ZnO 2008.5.2 Growth Rates of the Crystallographic Facets of Hydrothermal ZnO 2008.6 Properties of Bulk Hydrothermal ZnO 2058.6.1 Extended Imperfections (Dislocations, Voids, etc.) and Surface Studies 2058.6.2 Impurities 2088.6.3 Electrical Properties 2108.6.4 Optical Properties 2138.6.5 Etching and Polishing 2158.7 Conclusion 217Acknowledgements 217References 2189 Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO-Based Hybrid Devices 221Ryoko Shimada and Hadis Morkoç9.1 Introduction 2219.2 Growth of GaN/ZnO 2229.3 Compositional Analysis 2309.4 Structural Analysis 2329.5 Surface Studies 2359.6 Optical Properties 2379.6.1 Transmission Analysis 2379.6.2 Cathodoluminescence Analysis 2399.6.3 Photoluminescence Analysis 2429.7 Electrical Properties 2499.8 GaN/ZnO Hybrid Devices 2529.8.1 Hybrid ZnO/GaN Heterojunction LED 2539.8.2 ZnO-based Hybrid Microcavity 2599.9 Conclusions 261Acknowledgements 262References 26210 Room Temperature Stimulated Emission and ZnO-Based Lasers 265D.M. Bagnall10.1 Introduction 26510.2 Emission Mechanisms 26610.3 Stimulated Emission 26710.3.1 Bulk ZnO 26710.3.2 Epitaxial Layers 26710.3.3 Quantum wells and Superlattices 27010.3.4 ZnMgO/ZnO Structures 27010.3.5 ZnO/ZnCdO Structures 27210.4 Zinc Oxide Lasers 27410.4.1 Introduction 27410.4.2 Microstructural Lasers 27510.4.3 Powder Lasers 27810.4.4 Nanowire Lasers 27910.4.5 ZnO Laser Diodes 28010.5 Conclusions 281References 28211 ZnO-Based Ultraviolet Detectors 285Jian Zhong and Yicheng Lu11.1 Introduction 28511.2 Photoconductivity in ZnO 28811.2.1 Persistent Photoconductivity 29311.2.2 Negative Photoconductivity 29511.3 ZnO Film-Based UV Photodetectors 29711.3.1 Photoconductive UV Detector 29711.3.2 Schottky Barrier UV Photodetectors 30111.3.3 Integrated Surface Acoustic Wave and Photoconductive Wireless UV Detectors 30511.3.4 Photodetectors Using ZnO TFT 31411.3.5 MgXZn1-XO Uv Photodetector 31511.4 ZnO NW UV Photodetectors 31811.4.1 Photoconductive Gain in a ZnO NW 31811.4.2 Noise Characteristics of ZnO NW UV Photodetector 32311.5 Conclusions 325Acknowledgements 325References 32612 Room-Temperature Stimulated Emission from ZnO Multiple Quantum Wells Grown on Lattice-Matched Substrates 331Takayuki Makino, Yusaburo Segawa, Masashi Kawasaki and Hideomi Koinuma12.1 Introduction 33112.2 Experimental Details 33312.3 Quantum Confinement Effect of Excitons in QWs 33312.4 Exciton–Phonon Interaction in QWs 33612.5 The Localization Mechanism of the Exciton in a QW 33712.6 Time-Resolved Luminescence in ZnO QWs 34112.7 Stimulated Emission in MQWs 34212.8 Summary 346Acknowledgements 347References 347Index 351

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