Del 15 i serien Wiley Series in Materials for Electronic & Optoelectronic Applications

Properties of Group-IV, III-V and II-VI Semiconductors

Inbunden, Engelska, 2005

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Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide.The purpose of this book is twofold:* to discuss the key properties of the group-IV, III-V and II-VI semiconductors* to systemize these properties from a solid-state physics aspectThe majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed.The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive.The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.

Produktinformation

Utgivningsdatum2005-02-11
Mått174 x 253 x 29 mm
Vikt879 g
FormatInbunden
SpråkEngelska
SerieWiley Series in Materials for Electronic & Optoelectronic Applications
Antal sidor416
FörlagJohn Wiley & Sons Inc
ISBN9780470090329

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Series Preface xiiiPreface xvAcknowledgments/Dedication xvii1 Structural Properties 11.1 Ionicity 11.1.1 Definition 1(a) Phillips ionicity 2(b) Pauling ionicity 2(c) Harrison ionicity 21.1.2 Ionicity Value 31.2 Elemental Isotopic Abundance and Molecular Weight 31.2.1 Elemental Isotopic Abundance 31.2.2 Molecular Weight 41.3 Crystal Structure and Space Group 41.3.1 Crystal Structure 4(a) Diamond, zinc-blende and wurtzite structures 4(b) Hexagonal and rhombohedral structures 7(c) Rocksalt structure 91.3.2 Space Group 101.4 Lattice Constant and Related Parameters 121.4.1 Lattice Constant 12(a) Room-temperature value 12(b) Near-neighbor distance 12(c) External perturbation effect 131.4.2 Molecular and Crystal Densities 131.5 Structural Phase Transitions 141.6 Cleavage 151.6.1 Cleavage Plane 151.6.2 Surface Energy 18(a) Theoretical value 18(b) Experimental value 20References 202 Thermal Properties 232.1 Melting Point and Related Parameters 232.1.1 Phase Diagram 232.1.2 Melting Point 232.2 Specific Heat 262.3 Debye Temperature 282.4 Thermal Expansion Coefficient 302.5 Thermal Conductivity and Diffusivity 332.5.1 Thermal Conductivity 332.5.2 Thermal Diffusivity 39References 393 Elastic Properties 413.1 Elastic Constant 413.1.1 General Remarks 413.1.2 Room-temperature Value 423.1.3 External Perturbation Effect 48(a) Temperature effect 48(b) Pressure effect 503.2 Third-order Elastic Constant 513.3 Young’s Modulus, Poisson’s Ratio and Similar Properties 533.3.1 Young’s Modulus and Poisson’s Ratio: Cubic Lattice 533.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice 563.3.3 Young’s Modulus and Poisson’s Ratio: Hexagonal Lattice 603.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice 613.4 Microhardness 623.5 Sound Velocity 68References 724 Lattice Dynamic Properties 734.1 Phonon Dispersion Relation 734.1.1 Brillouin Zone 73(a) Face-centered cubic lattice 74(b) Hexagonal lattice 74(c) Rhombohedral lattice 754.1.2 Phonon Dispersion Curve 75(a) Cubic lattice 75(b) Hexagonal lattice 774.1.3 Phonon Density of States 794.2 Phonon Frequency 804.2.1 Room-temperature Value 804.2.2 External Perturbation Effect 84(a) Temperature effect 84(b) Pressure effect 864.3 Mode Grüneisen Parameter 874.4 Phonon Deformation Potential 884.4.1 Cubic Lattice 884.4.2 Hexagonal Lattice 91References 925 Collective Effects and Some Response Characteristics 955.1 Piezoelectric and Electromechanical Constants 955.1.1 Piezoelectric Constant 95(a) Piezoelectric stress constant 95(b) Piezoelectric strain constant 985.1.2 Electromechanical Coupling Constant 995.2 Fröhlich Coupling Constant 99References 1016 Energy-band Structure: Energy-band Gaps 1036.1 Basic Properties 1036.1.1 Energy-band Structure 103(a) Diamond-type semiconductor 104(b) Zinc-blende-type semiconductor 106(c) Wurtzite-type semiconductor 1086.1.2 Electronic Density of States 1116.2 E 0 -gap Region 1146.2.1 Effective Ɣ-point Hamiltonian 1146.2.2 Room-temperature Value 1156.2.3 External Perturbation Effect 120(a) Temperature effect 120(b) Pressure effect 124(c) Temperature and pressure coefficients 1246.2.4 Doping Effect 1266.3 Higher-lying Direct Gap 1306.3.1 Cubic Semiconductor 130(a) Room-temperature value 130(b) External perturbation effect 1336.3.2 Hexagonal and Rhombohedral Semiconductors 1376.4 Lowest Indirect Gap 1376.4.1 Room-temperature Value 1376.4.2 External Perturbation Effect 138(a) Temperature effect 138(b) Pressure effect 139(c) Temperature and pressure coefficients 1426.5 Conduction-valley Energy Separation 1426.6 Direct–Indirect-gap Transition Pressure 142References 1437 Energy-band Structure: Effective Masses 1477.1 Electron Effective Mass: Ɣ Valley 1477.1.1 General Remarks 1477.1.2 Numerical Value 1497.1.3 Polaron Effect 1517.1.4 External Perturbation and Doping Effects 152(a) Temperature effect 152(b) Pressure effect 153(c) Doping effect 1557.2 Electron Effective Mass: Satellite Valley 1587.2.1 Camel’s Back Structure 1587.2.2 Numerical Value 1597.3 Hole Effective Mass 1597.3.1 Effective Ɣ-valence-band Hamiltonian and Luttinger Parameter 1597.3.2 Numerical Value 164(a) Cubic semiconductor 164(b) Hexagonal and rhombohedral semiconductors 1677.3.3 Polaron Effect 1687.3.4 External Perturbation and Doping Effects 170(a) Temperature effect 170(b) Pressure effect 170(c) Doping effect 170References 1718 Deformation Potentials 1738.1 Intravalley Deformation Potential: Ɣ Point 1738.1.1 Conduction Band 1738.1.2 Valence Band 1758.1.3 E 0 Gap 1798.1.4 Optical Phonon Deformation Potential 1818.2 Intravalley Deformation Potential: High-symmetry Points 1838.2.1 L Point 183(a) Hydrostatic and shear deformation potentials: conduction band 183(b) Optical phonon deformation potential 185(c) Valence-band deformation potential 186(d) Hydrostatic and interband deformation potentials: E 1 and E 1 + ∆ 1 gaps 1868.2.2 X Point 188(a) Hydrostatic and shear deformation potentials: conduction band 188(b) Hydrostatic and interband deformation potentials: E 2 gap 1898.3 Intervalley Deformation Potential 1898.3.1 General Remarks 1898.3.2 Numerical Value 192References 1929 Electron Affinity and Schottky Barrier Height 1959.1 Electron Affinity 1959.1.1 An Overview 1959.1.2 Numerical Value 1969.2 Schottky Barrier Height 1989.2.1 An Ideal Schottky–Mott Contact 1989.2.2 Case Study: Au/Semiconductor Contact 2029.2.3 Surface Reconstruction and External Perturbation Effect 204(a) Surface reconstruction 204(b) Temperature effect 205(c) Pressure effect 2059.2.4 Breakdown Voltage 206References 20810 Optical Properties 21110.1 Summary of Optical Dispersion Relations 21110.1.1 Dielectric Permittivity 21110.1.2 Optical Dispersion Relation 21310.1.3 Optical Sum Rule 21410.1.4 Optical Spectra 21610.2 The Reststrahlen Region 21710.2.1 Static and High-frequency Dielectric Constants 217(a) Room-temperature value 217(b) External perturbation effect 21910.2.2 Reststrahlen Spectra 222(a) Zinc-blende-type and rocksalt-type semiconductors 222(b) Hexagonal semiconductor 226(c) External perturbation effect 22710.2.3 Multiphonon Optical Absorption Spectra 22810.3 At or Near the Fundamental Absorption Edge 23010.3.1 Free-exciton Binding Energy and Related Parameters 230(a) Exciton states: direct exciton 230(b) Exciton states: indirect exciton 232(c) Exciton binding energy and related parameters 233(d) Spin-exchange interaction constant 23610.3.2 Refractive Index 236(a) Theoretical dispersion model 236(b) Long-wavelength n value: empirical formula 240(c) External perturbation effect 24110.3.3 Optical Absorption at the Fundamental Absorption Edge 244(a) Critical point: definition 244(b) Free electron–hole pair transition 245(c) Excitonic transition 251(d) Experimental 25310.3.4 Urbach Tail 25610.4 The Interband Transition Region 25810.4.1 Model Dielectric Function 258(a) Fundamental absorption edge 259(b) E 1 and E 1 + ∆ 1 transitions 259(c) E ′ ′ 0 , E 2 and E 1 transitions 260(d) Plasma and d-band effects 26210.4.2 Fundamental Optical Spectra 263(a) Si 263(b) GaAs 265(c) w-CdS 26510.4.3 External Perturbation and Doping Effects 268(a) Temperature effect 268(b) Pressure effect 268(c) Doping effect 26910.5 Free-carrier Absorption and Related Phenomena 27010.5.1 Free-carrier Absorption 27010.5.2 Interconduction-band and Intervalence-band Absorption 274(a) Interconduction-band absorption 274(b) Intervalence-band absorption 27510.5.3 Free-carrier-induced Change in Refractive Index 278References 27811 Elasto-optic, Electro-optic and Nonlinear Optical Properties 28311.1 Elasto-optic Effect 28311.1.1 Theoretical Expression 28311.1.2 Experimental Value 28511.2 Linear Electro-optic Constant 29111.2.1 Theoretical Expression 29111.2.2 Experimental Value 29411.3 Quadratic Electro-optic Constant 29511.3.1 Theoretical Expression 29511.3.2 Experimental Value 29811.4 Franz–Keldysh Effect 30011.4.1 Theoretical Expression 30011.4.2 Experimental Value 30111.5 Nonlinear Optical Constant 30211.5.1 Second-order Nonlinear Optical Susceptibility 30211.5.2 Third-order Nonlinear Optical Susceptibility 30811.5.3 Two-photon Absorption 309References 31112 Carrier Transport Properties 31512.1 Low-field Mobility: Electrons 31512.1.1 Electron Scattering Mechanism 315(a) Intervalley scattering 317(b) Polar optical scattering 317(c) Nonpolar optical scattering 318(d) Piezoelectric scattering 318(e) Deformation potential scattering 318(f) Ionized impurity scattering 319(g) Neutral impurity scattering 319(h) Space-charge scattering 319(i) Alloy scattering 320(j) Carrier–carrier scattering 32012.1.2 Three-valley Model 32012.1.3 Room-temperature Value 32112.1.4 External Perturbation and Doping Effects 324(a) Temperature effect 324(b) Pressure effect 325(c) Doping effect 32612.1.5 Hall Factor 32812.2 Low-field Mobility: Holes 33112.2.1 Hole Scattering Mechanism 33112.2.2 Room-temperature Value 33312.2.3 External Perturbation and Doping Effects 333(a) Temperature effect 333(b) Pressure effect 337(c) Doping effect 33712.3 High-field Transport: Electrons 33912.3.1 Electron Drift Velocity–Field Characteristic 33912.3.2 Electron Saturation Drift Velocity 347(a) Temperature dependence 347(b) LO phonon scattering-limited electron saturation drift velocity 34812.4 High-field Transport: Holes 34912.4.1 Hole Drift Velocity–Field Characteristic 34912.4.2 Hole Saturation Drift Velocity 35212.5 Minority-carrier Transport: Electrons in p-type Materials 35312.5.1 Minority-electron Mobility 35312.5.2 Minority-electron Drift Velocity 35612.5.3 Minority-electron Lifetime and Diffusion Length 35612.6 Minority-carrier Transport: Holes in n-type Materials 35912.6.1 Minority-hole Mobility 35912.6.2 Minority-hole Lifetime and Diffusion Length 36012.7 Impact Ionization Coefficient 36212.7.1 Theoretical Consideration 36212.7.2 Experimental Value 365(a) Electric-field dependence 365(b) Temperature dependence 366(c) Crystallographic direction dependence 368References 369Index 373