SOI Lubistors

Professor Yasuhisa Omura, Department of Electric, Electronics and Information Engineering,?Kansai University, Osaka, JapanProfessor Omura obtained his Ph D in Engineering from Kyushu University, Japan, in 1984, having been awarded Young Researcher Award (for the proposal of the Lubistor) from IEICE, Japan the previous year. Since inventing the Lubistor in 1982, he has published 12 papers and 10 conference papers characterizing its operation, its physics, and possible applications, in addition to almost 300 published articles and conference papers on other area of interest, including physics-based device modeling and photonic crystal design and propagation mode control.?He has been an IEEE Fellow since 2010.

• Preface xiii Acknowledgements xvIntroduction to an Exotic Device World xviiPart One BRIEF REVIEWAND MODERN APPLICATIONS OF PN-JUNCTION DEVICES1 Concept of an Ideal pn Junction 3References 42 Understanding the Non-ideal pn Junction – Theoretical Reconsideration 72.1 Introduction 72.2 Bulk pn-Junction Diode 82.2.1 Assumptions 82.2.2 Model A – Low Doping Case 92.2.3 Model B – High Doping Case 182.3 Bulk pn-Junction Diode – Reverse Bias 242.3.1 Model A – Low Doping Case 242.3.2 Model B – High Doping Case 252.4 The Insulated-Gate pn Junction of the SOI Lubistor – Forward Bias 322.4.1 The Positive Gate Voltage Condition 322.4.2 The Negative Gate Voltage Condition 352.5 The Insulated-Gate pn Junction of theSOI Lubistor – Reverse Bias 35References 373 Modern Applications of the pn Junction 39References 40Part Two PHYSICS AND MODELING OF SOI LUBISTORS – THICK-FILM DEVICES4 Proposal of the Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor) 434.1 Introduction 434.2 Device Structure and Parameters 434.3 Discussion of Current–Voltage Characteristics 454.4 Summary 47References 475 Experimental Consideration for Modeling of Lubistor Operation 495.1 Introduction 495.2 Experimental Apparatus 495.3 Current–Voltage Characteristics of Lubistors 525.4 Lubistor Potential Profiles and Features 565.5 Discussion 575.5.1 Simplified Analysis of Lubistor Operation 575.5.2 On the Design of Lubistors 605.6 Summary 61References 616 Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations 636.1 Introduction 636.2 Device Structure and Measurement System 636.3 Equivalent Circuit Models of an SOI Lubistor 656.3.1 Device Simulation 656.3.2 Equivalent Circuit Models 686.4 Summary 72References 737 Noise Characteristics and Modeling of Lubistor 757.1 Introduction 757.2 Experiments 757.2.1 Device Structure 757.2.2 Measurement System 777.3 Results and Discussion 777.3.1 I–V Characteristics of an SOI Lubistor and a Simple Analytical Model 777.3.2 Noise Spectral Density of SOI Lubistors and Their Feature 817.3.3 Advanced Analysis of Anode Noise Spectral Density 837.4 Summary 86References 868 Supplementary Study on Buried Oxide Characterization 898.1 Introduction 898.2 Physical Model for the Transition Layer 908.3 Capacitance Simulation 938.3.1 A Structure to Evaluate Capacitance 938.3.2 Numerical Simulation Technique 948.4 Device Fabrication 958.5 Results and Discussion 968.5.1 Electrode-to-Electrode Capacitance Dependence on Frequency 968.5.2 Drain-to-Substrate Capacitance Dependence on Bias 988.5.3 Electrode-to-Electrode Capacitance Dependence on Transition Layer Thickness 1018.6 Summary 101References 102Part Three PHYSICS AND MODELING OF SOI LUBISTORS – THIN-FILM DEVICES9 Negative Conductance Properties in Extremely Thin SOI Lubistors 1059.1 Introduction 1059.2 Device Fabrication and Measurements 1059.3 Results and Discussion 1069.4 Summary 109References 10910 Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors 11110.1 Introduction 11110.2 Experiments 11110.2.1 Anode Common Configuration 11310.2.2 Cathode Common Configuration 11310.3 Physical Models and Simulations 11410.3.1 Fundamental Models 11410.3.2 Theoretical Simulations 11810.3.3 Influences on Characteristics of Extremely Ultra-Thin SOI MOSFET Devices 12210.4 Summary 122Appendix 10A: Intrinsic Carrier Concentration (niq) and the Fermi Level in 2DSS 122Appendix 10B: Calculation of Electron and Hole Densities in 2DSS 125References 12511 Two-Dimensional Quantization Effect on Indirect Tunneling in SOI Lubistors with a Thin Silicon Layer 12711.1 Introduction 12711.2 Experimental Results 12811.2.1 Junction Current Dependence on Anode Voltage 12811.2.2 Junction Current Dependence on Gate Voltage 13211.3 Theoretical Discussion 13411.3.1 Qualitative Consideration of the Low-Dimensional Indirect Tunneling Process 13411.3.2 Theoretical Formulations of Tunneling Current and Discussion 13411.4 Summary 140Appendix 11A: Wave Function Coupling Effect in the Lateral Two-Dimensional-System-to-Three-Dimensional-System (2D-to-3D) Tunneling Process 141References 14112 Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors 14312.1 Introduction 14312.2 Device Structures and Experimental Apparatus 14412.3 Results and Discussion 14512.3.1 I–V Characteristics under the Reverse-Biased Condition 14512.4 Summary 151Appendix 12A: Derivation of Equations (12.6) and (12.9) 151References 15313 Supplementary Consideration of I-V Characteristics of Forward-Biased Ultra-Thin Lubistors 15513.1 Introduction 15513.2 Device Structures and Bias Configuration 15513.3 Results and Discussion 15613.4 Summary 157References 15814 Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET 15914.1 Introduction 15914.2 Device and Experiments 15914.3 Results and Discussion 15914.3.1 ID–VG and IG–VG Characteristics of the Ultra-Thin-Body DT-MOSFET 15914.3.2 Control of Bipolar Action by the MOS Gate 16214.4 Channel Polarity Dependence of Bipolar Action 16214.4.1 ID–VG and gm–VG Characteristics of the Ultra-Thin-Body DT-MOSFET 16214.4.2 Difference of Bipolar Operation between the n-Channel DT-MOS and the p-Channel DT-MOS 16314.4.3 Impact of Body Thickness on Bipolar Operation 16414.5 Summary 166References 16615 Supplementary Study on Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET 16715.1 Introduction 16715.2 Device Structures and Parameters 16715.3 Results and Discussion 16915.3.1 SOI MOSFET Mode and DT-MOSFET Mode 16915.3.2 Temperature Evolution of Transconductance (gm) Characteristics and Impact of Channel Length on gm Characteristics 17015.3.3 Impact of SOI Layer Thickness on gm Characteristics 17315.4 Summary 173References 174Part Four CIRCUIT APPLICATIONS16 Subcircuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications 17916.1 Introduction 17916.2 Equivalent Circuit Models of SOI Lubistors and their Applications 18016.2.1 Device Structure and Device Simulation 18016.2.2 Equivalent Circuit Models 18316.3 ESD Protection Circuit 18316.4 Direct Current Characteristics of the ESD Protection Devices and Their SPICE Models 18616.5 ESD Event and Performance Evaluation of an ESD Protection Circuit 18916.6 Summary 196References 19617 A New Basic Element for Neural Logic Functions and Capability in Circuit Applications 19917.1 Introduction 19917.2 Device Structure, Model, and Proposal of a New Logic Element 19917.2.1 Device Structure and Fundamental Characteristics 19917.2.2 Device Model for the Lubistor 20117.2.3 Proposal of a New Logic Element 20317.3 Circuit Applications and Discussion 20617.3.1 Examples of Fundamental Elements for Circuit Applications 20617.3.2 On the Further Improvement of Functions of the Basic Logic Element 21117.4 Summary 211References 21118 Sub-1-V Voltage Reference Circuit Technology as an Analog Circuit Application 21318.1 Review of Bandgap Reference 21318.2 Challenging Study of Sub-1-V Voltage Reference 214References 21519 Possible Implementation of SOI Lubistors into Conventional Logic Circuits 217References 218Part Five OPTICAL DEVICE APPLICATIONS OF SOI LUBISTORS20 Potentiality of Electro-Optic Modulator Based on the SOI Waveguide 22320.1 Introduction 22320.2 Characterization of the Quasi-One-Dimensional Photonic Crystal Waveguide 22420.3 Electro-Optic Modulator Based on the SOI Waveguide 23020.4 Summary 233References 234Part Six SOI LUBISTOR AS A TESTING TOOL21 Principles of Parameter Extraction 237References 23922 Charge Pumping Technique 24122.1 Introduction 24122.2 Experimental and Simulation Details 24122.3 Results and Discussion 24322.4 Summary 246References 246Part Seven FUTURE PROSPECTS23 Overview 24923.1 Introduction 24923.2 i-MOS Transistor 24923.3 Tunnel FET 25123.4 Feedback FET 25423.5 Potential of Offset-Gate Lubistor 25623.6 Si Fin LED with a Multi-quantum Well 25823.7 Future of the pn Junction 258References 25924 Feasibility of the Lubistor-Based Avalanche Phototransistor 26124.1 Introduction 26124.2 Theoretical Formulation of the Avalanche Phenomenon in Direct-Bandgap Semiconductors 26124.3 Theoretical Formulation of the Avalanche Phenomenon in Indirect-Bandgap Semiconductors 26424.4 Theoretical Consideration of the Avalanche Phenomenon in a One-Dimensional Wire pn Junction 26524.5 Summary 269References 269Part Eight SUMMARY OF PHYSICS FOR SEMICONDUCTOR DEVICES AND MATHEMATICS FOR DEVICE ANALYSES25 Physics of Semiconductor Devices for Analysis 27325.1 Free Carrier Concentration and the Fermi Level in Semiconductors 27325.2 Impurity Doping in Semiconductors 27525.3 Drift and Diffusion of Carriers and Current Continuity in Semiconductors 27525.4 Stationary-State Schr€odinger Equation to Analyze Quantum-Mechanical Effects in Semiconductors 27625.5 Time-dependent Schr€odinger Equation to Analyze Dynamics in Semiconductors 27725.6 Quantum Size Effects in Nano-Scale Semiconductors 27825.7 Tunneling through Energy Barriers in Semiconductors 28125.8 Low-Dimensional Tunneling in Nano-Scale Semiconductors 28225.9 Photon Absorption and Electronic Transitions 28425.9.1 Fundamental Formulations 28425.9.2 Interband Transition – Direct Bandgap 28525.9.3 Interband Transition – Indirect Bandgap 286References 28726 Mathematics Applicable to the Analysis of Device Physics 28926.1 Linear Differential Equation 28926.2 Operator Method 29026.3 Klein–Gordon-Type Differential Equation 291References 292Bibliography 293Index 295