Fuccio Cristiano received his Ph.D. degree from the University of Surrey, U.K., in 1998. From 1998 to 2000, he worked in the CEMES/CNRS laboratory of Toulouse, France. In 2000, he joined the LAAS/CNRS laboratory of Toulouse, where he has managed the research team “Materials and Processes for Nanoelectronics” from 2012 to 2016.His research interests concern the investigation of advanced doping techniques in semiconductors (with special focus on ultra-rapid thermal processes) and the impact of process-related defects on dopant activation anomalies. He has authored or coauthored about 130 papers in scientific journals and has given several invited presentations on Ion beam induced defects in silicon. Antonino La Magna received his master’s in physics (cum laude) and his Ph.D. in Physics at the University of Catania in1992 and 1996, respectively. Since 1999, he has been a member of the permanent staff at the Institute for the Microelectronics and Microsystems of the Italian National Council of Research (CNR-IMM), where he is responsible of the computational team and resources (1999-Today). Currently, he also leads the research group on advanced processes (2010-Today). He is and has been coordinator and responsible for the CNR-IMM of several international projects and contract research on behalf of industry.He has authored over more than 270 publications in international journals in the fields of theoretical solid state physics, technological processes and process and device simulations, and he is a frequently invited speaker at international conferences.

• 1. Historical evolution of pulsed laser annealing for semiconductor processingGuglielmo Fortunato, Luigi Mariucci, Alessandro Pecora, Vittorio Privitera, and Frank Simon2. Laser-matter interactionsSpyros Stathopoulos and Dimitris Tsoukalas3. Atomistic modeling of laser-related phenomena Luis A.Marqués, María Aboy, Pedro López, Iván Santos, Lourdes Pelaz, Giuseppe Fisicaro4. Laser annealing applications for semiconductor devices manufacturingKarim Huet5. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductorsRay Duffy, Enrico Napolitani, and Fuccio Cristiano6. Continuum modeling and TCAD simulations of laser-related phenomena in CMOS applicationsSalvatore Francesco Lombardo, Ioannis Deretzis, Alberto Sciuto, and Antonino La Magna7. Laser engineering of carbon materials for optoelectronic applicationsFrédéric Antoni and François Stock8. Optical hyperdopingWenjie Yang, Shao Qi Lim, and Jim S. Williams9. Laser ultra-doped silicon: Superconductivity and applicationsFrancesca Chiodi, Richard Daubriac and Sébastien Kerdilès

Fuccio Cristiano received his Ph.D. degree from the University of Surrey, U.K., in 1998. From 1998 to 2000, he worked in the CEMES/CNRS laboratory of Toulouse, France. In 2000, he joined the LAAS/CNRS laboratory of Toulouse, where he has managed the research team “Materials and Processes for Nanoelectronics” from 2012 to 2016.His research interests concern the investigation of advanced doping techniques in semiconductors (with special focus on ultra-rapid thermal processes) and the impact of process-related defects on dopant activation anomalies. He has authored or coauthored about 130 papers in scientific journals and has given several invited presentations on Ion beam induced defects in silicon. Antonino La Magna received his master’s in physics (cum laude) and his Ph.D. in Physics at the University of Catania in1992 and 1996, respectively. Since 1999, he has been a member of the permanent staff at the Institute for the Microelectronics and Microsystems of the Italian National Council of Research (CNR-IMM), where he is responsible of the computational team and resources (1999-Today). Currently, he also leads the research group on advanced processes (2010-Today). He is and has been coordinator and responsible for the CNR-IMM of several international projects and contract research on behalf of industry.He has authored over more than 270 publications in international journals in the fields of theoretical solid state physics, technological processes and process and device simulations, and he is a frequently invited speaker at international conferences.

• 1. Historical evolution of pulsed laser annealing for semiconductor processingGuglielmo Fortunato, Luigi Mariucci, Alessandro Pecora, Vittorio Privitera, and Frank Simon2. Laser-matter interactionsSpyros Stathopoulos and Dimitris Tsoukalas3. Atomistic modeling of laser-related phenomena Luis A.Marqués, María Aboy, Pedro López, Iván Santos, Lourdes Pelaz, Giuseppe Fisicaro4. Laser annealing applications for semiconductor devices manufacturingKarim Huet5. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductorsRay Duffy, Enrico Napolitani, and Fuccio Cristiano6. Continuum modeling and TCAD simulations of laser-related phenomena in CMOS applicationsSalvatore Francesco Lombardo, Ioannis Deretzis, Alberto Sciuto, and Antonino La Magna7. Laser engineering of carbon materials for optoelectronic applicationsFrédéric Antoni and François Stock8. Optical hyperdopingWenjie Yang, Shao Qi Lim, and Jim S. Williams9. Laser ultra-doped silicon: Superconductivity and applicationsFrancesca Chiodi, Richard Daubriac and Sébastien Kerdilès

Fuccio Cristiano received his Ph.D. degree from the University of Surrey, U.K., in 1998. From 1998 to 2000, he worked in the CEMES/CNRS laboratory of Toulouse, France. In 2000, he joined the LAAS/CNRS laboratory of Toulouse, where he has managed the research team “Materials and Processes for Nanoelectronics” from 2012 to 2016.His research interests concern the investigation of advanced doping techniques in semiconductors (with special focus on ultra-rapid thermal processes) and the impact of process-related defects on dopant activation anomalies. He has authored or coauthored about 130 papers in scientific journals and has given several invited presentations on Ion beam induced defects in silicon. Antonino La Magna received his master’s in physics (cum laude) and his Ph.D. in Physics at the University of Catania in1992 and 1996, respectively. Since 1999, he has been a member of the permanent staff at the Institute for the Microelectronics and Microsystems of the Italian National Council of Research (CNR-IMM), where he is responsible of the computational team and resources (1999-Today). Currently, he also leads the research group on advanced processes (2010-Today). He is and has been coordinator and responsible for the CNR-IMM of several international projects and contract research on behalf of industry.He has authored over more than 270 publications in international journals in the fields of theoretical solid state physics, technological processes and process and device simulations, and he is a frequently invited speaker at international conferences.

• 1. Historical evolution of pulsed laser annealing for semiconductor processingGuglielmo Fortunato, Luigi Mariucci, Alessandro Pecora, Vittorio Privitera, and Frank Simon2. Laser-matter interactionsSpyros Stathopoulos and Dimitris Tsoukalas3. Atomistic modeling of laser-related phenomena Luis A.Marqués, María Aboy, Pedro López, Iván Santos, Lourdes Pelaz, Giuseppe Fisicaro4. Laser annealing applications for semiconductor devices manufacturingKarim Huet5. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductorsRay Duffy, Enrico Napolitani, and Fuccio Cristiano6. Continuum modeling and TCAD simulations of laser-related phenomena in CMOS applicationsSalvatore Francesco Lombardo, Ioannis Deretzis, Alberto Sciuto, and Antonino La Magna7. Laser engineering of carbon materials for optoelectronic applicationsFrédéric Antoni and François Stock8. Optical hyperdopingWenjie Yang, Shao Qi Lim, and Jim S. Williams9. Laser ultra-doped silicon: Superconductivity and applicationsFrancesca Chiodi, Richard Daubriac and Sébastien Kerdilès