In Situ Characterization of Thin Film Growth

Gertjan Koster is a Professor at the University of Twente in the Netherlands. He is also a visiting professor at the Joseph Stephan Institute in Slovenia. His current research focuses on the growth and study of artificial materials, the physics of reduced scale (nanoscale) materials, metal–insulator transitions, and in situ spectroscopic characterization. Guus Rijnders is a Professor and Chairman of Inorganic Materials Science, University of Twente, Enschede, Netherlands. His research currently focuses on the integration of functional and smart materials with electronic and microelectromechanical systems (MEMS).

• Contributor contact detailsChapter 1: Reflection high-energy electron diffraction (RHEED) for in situ characterization of thin film growthAbstract:1.1 Reflection high-energy electron diffraction (RHEED) and pulsed laser deposition (PLD)1.2 Basic principles of RHEED1.3 Analysis of typical RHEED patterns: the influence of surface disorder1.4 Crystal growth: kinetics vs thermodynamics1.5 Variations of the specular intensity during deposition1.6 Kinetical growth modes and the intensity response in RHEED1.7 RHEED intensity variations and Monte Carlo simulations1.8 Conclusions1.9 AcknowledgementsChapter 2: Inelastic scattering techniques for in situ characterization of thin film growth: backscatter Kikuchi diffractionAbstract:2.1 Introduction2.2 Kikuchi patterns2.3 Kikuchi lines in reflection high-energy electron diffraction (RHEED) images2.4 Dual-screen RHEED and Kikuchi pattern collection2.5 Lattice parameter determination2.6 Epitaxial film strain determination2.7 Kinematic and dynamic scattering2.8 Epitaxial film structure determination2.9 ConclusionChapter 3: Ultraviolet photoemission spectroscopy (UPS) for in situ characterization of thin film growthAbstract:3.1 Introduction3.2 Principles of ultraviolet photoemission spectroscopy (UPS)3.3 Applications of UPS to thin film systems3.4 Future trendsChapter 4: X-ray photoelectron spectroscopy (XPS) for in situ characterization of thin film growthAbstract:4.1 Introduction4.2 In situ monitoring of thin film growth4.3 Measuring the reaction of thin films with gases using ambient pressure X-ray photoelectron spectroscopy (XPS)4.4 In situ measurements of buried interfaces using high kinetic energy XPS (HAXPES)4.5 Conclusions4.6 AcknowledgmentsChapter 5: In situ spectroscopic ellipsometry (SE) for characterization of thin film growthAbstract:5.1 Introduction5.2 Principles of ellipsometry5.3 In situ spectroscopic ellipsometry (SE) characterization5.4 In situ considerations5.5 Further in situ SE examples5.6 Conclusions5.8 AcknowledgmentsChapter 6: In situ ion beam surface characterization of thin multicomponent filmsAbstract:6.1 Introduction6.2 Background to ion backscattering spectrometry and time-of-flight (TOF) ion scattering and recoil methods6.3 Experimental set-ups6.4 Studies of film growth processes relevant to multicomponent oxides6.5 Conclusions6.6 AcknowledgmentsChapter 7: Spectroscopies combined with reflection high-energy electron diffraction (RHEED) for real-time in situ surface monitoring of thin film growthAbstract:7.1 Introduction7.2 Overview of processes and excitations by primary electrons in the surface7.3 Recombination and emission processes7.4 Descriptions and results of in situ spectroscopies combined with reflection high-energy electron diffractio (RHEED)7.5 Conclusion and future trendsChapter 8: In situ deposition vapor monitoringAbstract:8.1 Introduction8.2 Overview of vapor flux monitoring8.3 Quartz crystal microbalance (QCM)8.4 Vapor ionization techniques8.5 Optical absorption spectroscopy techniques8.6 Summary of techniques and resources8.7 Case studies8.8 Conclusions8.9 AcknowledgmentsChapter 9: Real-time studies of epitaxial film growth using surface X-ray diffraction (SXRD)Abstract:9.1 Introduction9.2 Growth kinetics studies of pulsed laser deposition (PLD) using surface X-ray diffraction (SXRD)9.3 Real-time SXRD in SrTiO3 PLD: an experimental case study9.4 Future trendsAcknowledgmentIndex