CCD Image Sensors in Deep-Ultraviolet

Flora Li received her Bachelor of Applied Science degree in Electrical Engineering from University of Waterloo, Canada, in 2002. She completed her MASc degree in Electrical Engineering at University of Waterloo in 2003, where her research focus was on the investigation of deep-UV sensitive CCD image sensors and the related radiation damage issues. She is currently pursuing her Ph.D. degree in the field of organic electronics and polymer TFTs, under the supervision of Prof. Arokia Nathan at the University of Waterloo.Arokia Nathan received his PhD in Electrical Engineering from the University of Alberta, Edmonton, Alberta, Canada, in 1988, where he was engaged in research related to the physics and numerical modeling of semiconductor microsensors. In 1987, he joined LSI Logic Corp., Santa Clara, CA where he worked on advanced multichip packaging techniques and related issues. Subsequently, he was at the Institute of Quantum Electronics, ETH Zürich, Switzerland. In 1989, he joined the Department of Electrical and Computer Engineering, University of Waterloo, where he is currently a Professor. In 1995, he was a Visiting Professor at the Physical Electronics Laboratory, ETH Zürich. His present research interests lie in fabrication of devices, circuits, and systems using disordered semiconductor, including organic, materials on rigid and mechanically flexible substrates for large area electronics. He held the DALSA/NSERC industrial research chair in sensor technology, and is a recipient of the Natural Sciences and Engineering Research Council E.W.R. Steacie Fellowship. He has published extensively in the field of sensor technology and CAD, and thin film transistor electronics, and is a co-author of the book, Microtransducer CAD, published by Springer in 1999.

• Overview of CCD.- CCD Imaging in the Ultraviolet (UV) Regime.- Silicon.- Silicon Dioxide.- Si-SiO2 Interface.- General Effects of Radiation.- Effects of Radiation on CCDs.- UV-Induced Effects in Si.- UV Laser Induced Effects in SiO2.- UV Laser Induced Effects at the Si-SiO2 Interface.- CCD Measurements at 157nm.- Design Optimizations for Future Research.- Concluding Remarks.