Advances in Non-volatile Memory and Storage Technology

Professor Yoshio Nishi is a Professor in the Department of Electrical Engineering and by courtesy in the Department of Material Science and Engineering. He was Director of the Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network and is now Director of Research of Stanford Center for Integrated Systems at Stanford University, USA Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles

• Part 1: Progress in nonvolatile memory research and application1. OxRAM technology development and performances2. Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications3. Advanced modeling and characterization techniques for innovative memory devices: The RRAM case4. Mechanism of memristive switching in OxRAM5. Interface effects on memristive devices6. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)7. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology8. 3D-NAND Flash memory and technology9. Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems10. Selector devices for x-point memoryPart 2: Emerging opportunities11. Ferroelectric memories12. Advances in nanowire PCM13. Flexible and transparent ReRAM devices for system on panel (SOP) application14. RRAM/memristor for computing15. Emerging memory technologies for neuromorphic hardware16. Neuromorphic computing with resistive switching memory devices