VLSI and Post-CMOS Electronics

Devices, circuits and interconnects

Inbunden, Engelska, 2019

AvRohit, Dhiman,Rohit Dhiman,Rajeevan Chandel

2 079 kr

Beställningsvara. Skickas inom 3-6 vardagar. Fri frakt för medlemmar vid köp för minst 249 kr.

Finns i fler format (1)

Inbunden

2 129 kr

Skickas inom 3-6 vardagar

VLSI, or Very-Large-Scale-Integration, is the practice of combining billions of transistors to create an integrated circuit. At present, VLSI circuits are realised using CMOS technology. However, the demand for ever smaller, more efficient circuits is now pushing the limits of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This 2-volume set addresses the current state of the art in VLSI technologies and presents potential options for post-CMOS processes.VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits. Volume 1 focuses on design, modelling and simulation, including applications in low voltage and low power VLSI, and post-CMOS devices and circuits. Volume 2 addresses a wide range of devices, circuits and interconnects.

Produktinformation

Utgivningsdatum2019-11-25
Mått156 x 234 x 23 mm
Vikt816 g
FormatInbunden
SpråkEngelska
SerieMaterials, Circuits and Devices
Antal sidor408
FörlagInstitution of Engineering and Technology
ISBN9781839530531

Tillhör följande kategorier

Elektronik och kommunikationer inom Naturvetenskap och teknik

Rohit Dhiman is an Assistant Professor in the Electronics & Communication Engineering Department at NIT Hamirpur, India, and is the author/co-author of over 30 publications in international journals and conference proceedings. His main research interest is in device and circuit modelling for low power VLSI design.Rajeevan Chandel is Professor in the Electronics & Communication Engineering Department and Dean (Research & Consultancy) at the National Institute of Technology (NIT) Hamirpur, India. She has over 150 research papers in peer reviewed international journals and conferences. Her research interests are electronics circuit modelling and low power VLSI design.

Section I: High-performance compound semiconductor devices and applicationsChapter 1: III-V compound semiconductor transistors - from planar to nanowire structuresChapter 2: UTB III-V-OI-Si MOS transistor: the future transistor for VLSI designChapter 3: Assessment of SiGe/Si heterojunction tunnel field-effect transistor for digital VLSI circuit applicationsChapter 4: Simulation framework for GaN devices with special mention to reliability concern Section II: Process variability in FinFETs: challenges and mitigationChapter 5: Impact of oxide thickness variation on the performance of junctionless FinFETChapter 6: Design and analysis of variability aware FinFET-based SRAM circuit design Section III: Through silicon via interconnects for three-dimensional integrationChapter 7: Modelling interconnects for future VLSI circuit applicationsChapter 8: Nanomagnetic computing for next generation interconnects and logic designChapter 9: Prospective current mode approach for on-chip interconnects in integrated circuit designsChapter 10: Design of through silicon vias for improved performance in 3D IC applicationsChapter 11: Prospective graphene-based through silicon vias in three-dimensional integrated circuits Section IV: Emerging technologies for integrated circuitsChapter 12: Radiation hard circuit design: flip-flop and SRAMChapter 13: Phase change memory: electrical circuit modelling, nanocrossbar performance analysis and applicationsChapter 14: Methods to design ternary gates and addersChapter 15: Single EXCCII based square/triangular wave generator for capacitive sensor interfacing and brief reviewChapter 16: Transient fault secured/tolerant architecture for DSP core