Trap Level Spectroscopy in Amorphous Semiconductors

Häftad, Engelska, 2010

Av Victor V. Mikla, Victor I. Mikla, Ukraine) Mikla, Victor V. (Physical and Mathematical Disciplines, Humanities & Natural Sciences Faculty, Uzhhgorod National University, Uzhhgorod, Ukraine) Mikla, Victor I. (Physical and Mathematical Disciplines, Humanities & Natural Sciences Faculty, Uzhhgorod National University, Uzhhorod, Viktor I. Mikla

1 589 kr

Beställningsvara. Skickas inom 7-10 vardagar

Fri frakt för medlemmar vid köp för minst 249 kr.

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.

Produktinformation

Utgivningsdatum2010-06-14
Mått152 x 229 x undefined mm
Vikt250 g
FormatHäftad
SpråkEngelska
Antal sidor128
FörlagElsevier - Health Sciences Division
ISBN9780323165037

Tillhör följande kategorier

Dr. Victor V. Mikla is affiliated with the Physical & Mathematical Disciplines, Department of Humanities & Natural Sciences, Uzhhgorod National University, Uzhhgorod,Ukraine Victor I. Mikla, PhD, is Chair of Physical & Mathematical Disciplines in the Department of Humanities & Natural Sciences at Uzhhgorod National University, Uzhhorod, Ukraine. Dr. Mikla specializes in photo-electronic materials and devices, and has published research articles widely on a broad range of inter-disciplinary topics including metastable states in amorphous chalcogenides, trap level spectroscopy, medical and non-medical imaging applications of amorphous semiconductors, xerographic spectroscopy, photo-induced & structural changes, and raman scattering.

IntroductionThermally stimulated depolarization currents in amorphous chalcogenidesCarrier transport processes in amorphous solidsTime-of-flight experiments in amorphous chalcogenide semiconductorsXerographic spectroscopy of states in mobility gapPhotoinduced effects on states in the mobility gapSpectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors