Silicon Carbide One-dimensional Nanostructures

Laurence LATU-ROMAIN is Associate Professor at the Joseph Fourier University in Grenoble, France. Her research interests include semiconductor materials and nanostructures, from their design and growth to their characterization. Maelig OLLIVIER is Associate Researcher at Imperial College London, UK in the Department of Materials, with interests in metallurgy

• FOREWORD ixINTRODUCTION xiiiLIST OF ACRONYMS xviiCHAPTER 1. PROPERTIES OF SIC-BASED ONE-DIMENSIONAL NANOSTRUCTURES 11.1. Intrinsic properties of silicon carbide 11.1.1. Crystallographic description 11.1.2. Physical and chemical properties of SiC 71.2. Properties of one-dimensional nanostructures 141.2.1. Definition and classification 141.2.2. High surface/volume ratio and its consequences 171.2.3. Specific properties at the nano metric scale 201.3. Conclusion 25CHAPTER 2. STATE OF THE ART OF THE GROWTH OF SIC-1D NANOSTRUCTURES 272.1. State of the art of the growth of SiC nanowires 272.1.1. Silicidation of carbon nanotubes 282.1.2. Synthesis through the VLS mechanism 292.1.3. Development in the gaseous phase – VS mechanism 332.1.4. Carburization of Si nanowires 342.1.5. Conclusion on the growth of SiC nanowires 362.2. State of the art of the growth of SiC nanotubes 372.3. State of the art of the growth of SiC-based core–shell nanowires 392.3.1. Si–SiC core–shell nanowires 392.3.2. Other SiC-based core–shell nanowires 402.4. Conclusion 41CHAPTER 3. AN ORIGINAL GROWTH PROCESS: THE CARBURIZATION OF SI NANOWIRES 433.1. Si nanowires 443.2. The carburization of bulk silicon 483.3. Experimental application 553.3.1. Carburization apparatus 553.3.2. Methods of characterization 563.4. Growth of core–shell Si–SiC nanowires 583.4.1. Introduction 583.4.2. Experimental study 593.5. Growth of silicon carbide nanotubes 733.5.1. Founding idea and experimental application 733.5.2. A word on the kinetics of carburization 773.6. Summary of the study of the carburization of silicon nanowires 793.6.1. Illustration of carburization mechanisms for the growth of Si–SiC nanowires or SiC nanotubes 793.6.2. The carburization of Si NW summarized: construction of an existence domain diagram 813.6.3. Criticism of the nanostructures obtained 84CHAPTER 4. SIC-BASED ONE-DIMENSIONAL NANOSTRUCTURE TECHNOLOGIES 874.1. Top-down approach: SiC plasma etching for the production of SiC nanowires 874.2. Mechanics 904.3. Energy 914.4. Electronics 934.4.1. Integration of nanostructures in a nanowire transistor 934.5. For biology 994.6. Future work 100CONCLUSION 103BIBLIOGRAPHY 107INDEX 127