Silicon Carbide, 2 Volume Set

Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests.Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications.Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) "Silicon carbide as semiconductor material: novel aspects of crystal growth and doping". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nurnberg, Germany, and has authored over 300 scientific publications.

• VOL 1: Growth, Defects, and Novel Applications1) Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches6) EPR Identification of Intrinsic Defects in 4H-SiC7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC9) Characterization of defects in silicon carbide by Raman spectroscopy10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS18) Epitaxial Graphene: an new Material19) Density Functional Study of Graphene Overlayers on SiC VOL 2: Power Devices and Sensors1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices2) Silicon Carbide power devices -Status and upcoming challenges with a special attention to industrial application3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts4) Reliability aspects of SiC Schottky Diodes5) Design, process, and performance of all-epitaxial normally-off SiC JFETs6) Extreme Temperature SiC Integrated Circuit Technology7) 1200 V SiC Vertical-channel-JFET based cascode switches8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen10) 4H-SiC MISFETs with Nitrogen-containing Insulators11) SiC Inversion Mobility12) Development of SiC diodes, power MOSFETs and intellegent Power Modules13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation14) Application of SiC-Transistors in Photovoltaic-Inverters15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection