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After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

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High Performance Logic And Circuits For High-speed Electronic Systems

Jain F, JAIN F, Faquir C Jain, C Broadbridge, M Gherasimova, Hong Tang, Usa) Jain, Faquir C (University Of Connecticut, Usa) Broadbridge, C (Southern Connecticut State Univ, Usa) Gherasimova, M (University Of Bridgeport, Usa) Tang, Hong (Yale University

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1 499 kr

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Wide Bandgap Semiconductor Electronics And Devices

Singisetti Uttam, SINGISETTI UTTAM, Uttam Singisetti, Towhidur Razzak, Yuewei Zhang, Usa) Singisetti, Uttam (Univ Of Buffalo, Usa) Razzak, Towhidur (The Ohio State Univ, Usa) Zhang, Yuewei (Univ Of California, Santa Barbara

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2 139 kr

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