Semiconductor Nanophotonics

Prasanta Kumar Basu (B.Sc honours in Physics), B. Tech, M.Tech and Ph.D. (all in Radio Physics and Electronics) joined the RPE department of Calcutta University as a Lecturer in 1971. His research has been in semiconductors. He is an Alexander von Humboldt fellow and he also worked as Visiting Professors in McMaster University, Canada, National Chung Cheng University, Taiwan, and TIFR, India. He was in several administrative positions in RPE department. After his retirement from CU in 2011, he worked as a UGB BSR Faculty fellow, then as Visiting Professor in IIT Kharagpur and finally as an investigator in a joint Indo Taiwan project. Since 2019, he is engaged in honorary collaborative research and book writing in RPE department.Bratati Mukhopadhyay received the B.Sc (Hons in Physics)., B.Tech., M.Tech., and Ph.D. degrees from the University of Calcutta, Kolkata, India, in 1994, 1997, 1999, and 2007, respectively. She joined Institute of Radio Physics and Electronics, CU, as a Lecturer in 2008. Her research area includes Group IV photonics, transport and scattering in semiconductor nanostructures, nanoscale FETs, etc. In addition, she is one of the authors of a book “Semiconductor Laser Theory” (CRC Press, 2015). She teaches CMOS analog circuit, VLSI design, guidedwave photonics, and photonic devices, in addition to semiconductor related subjects. She also supervises a number of B.Tech. and M.Tech. projects and guides several Ph.D. students.Rikmantra Basu (B.Sc honours in Physics), B. Tech (IT), M.Tech (RPE) and Ph.D. (CUNN) all from Calcutta University joined as an Assistant Professor in the ECE department of BITS Pilani in 2013 and then in the ECE department of NIT Delhi in 2014. His research is in Semiconductor photonic devices, Group IV photonics and plasmonics, sensors at mid IR using GeSn alloys, and biosensors on graphene. He is the recipient of URSI Young Scientist award and he worked as visiting Scientist in Bristol University, UK and National Chung Cheng University, Taiwan. He has guided and is guiding several M. Tech and Ph.D. students.

• Preface Acknowledgements Chapter 1: Introduction 1.1: Introduction to Nanophotonics 1.2: Nanophotonics : Scope 1.3: Introduction to Nanostructures 1.4: Novel Phenomena in Nanophotonics: A Brief Outline 1.5: Applications of Nanophotonics 1.6: Problems of Integration Chapter 2: Basic Properties of Semiconductors 2.1: Introduction 2.2: Band Structure 2.3: Density of States 2.4: Doping 2.5: Carrier Concentration 2.6: Carrier Concentration 2.7: Excess Carriers and Recombination 2.8: Excitons 2.9: Alloys and Heterojunctions 2.10: Quantum Structures 2.11: Strained Layers Chapter 3: Macroscopic Theory of Optical Processes 3.1: Introduction 3.2: Optical Constants 3.3: Phase and Group Velocities 3.4: Susceptibility of a Material: a Classical Model 3.5: Einstein's Model for Light-Matter Interaction Chapter 4: Photons and Electron-photon Interactions 4.1: Introduction 4.2: Wave Equation in a Rectangular Cavity 4.3: Quantization of the Radiation Field 4.4: Time Dependent Perturbation Theory 4.5: Interaction of an Electron with the Electromagnetic Field 4.6: Second Order Perturbation Theory Chapter 5: Electron Photon Interactions in Bulk Semiconductors 5.1: Introduction 5.2: Absorption Processes in Semiconductors 5.3: Fundamental Absorption in Direct gap 5.4: Intervalence Band Absorption 5.5: Free Carrier Absorption 5.6: Recombination and Luminescence 5.7: NonradiativeRecombination 5.8: Carrier Effect on Absorption and Refractive Index 5.9: Gain in Semiconductors Chapter 6: Optical Processes in QWs 6.1: Introduction 6.2: Optical Processes in QWs 6.3: Interband Absorption 6.4: Intersubband Absorption 6.5: Recombination in QWs 6.6: Loss Processes in QWs 6.7: Gain in QWs 6.8: Strained QW Lasers Chapter 7: Excitons in Bulk Semiconductors and QWs 7.1: Introduction 7.2: Excitons in Bulk Semiconductors 7.3: Excitonic Processes in QWs 7.4: Line Broadening Mechanisms for 2D Excitons 7.5: Effect of Electric Field in Semiconductors 7.6: Excitonic Characteristics in Fractional Dimensional Space Chapter 8: Nanowires 8.1: Introduction 8.2: Quantum Wires: Preliminaries 8.3: Excitonic Processes in QWRs 8.4: Classification of Nanowires 8.5: Growth of QWRs 8.6: Nanowires 8.7: Properties of NWRs 8.8: Applications of NWRs Chapter 9: Nanoparticles 9.1: Introduction 9.2: Quantum Dots 9.3: QD Growth Mechanisms and Structures 9.4: Zero Dimensional Systems 9.5: Deviation from Simple Theory: Effect of Broadening 9.6: QD Lasers : Structure and Gain Calculation 9.7: Intersubband Transitions 9.8: Excitonic Processes in QDs 9.9: Classification of Nanocrystals 9.10: Synthesis of Nanocrystals 9.11: Core-Shell Structures 9.12: Bright and Dark Excitons 9.13: Biexcitons and Trions 9.14: Applications Chapter 10: Microcavity 10.1: Introduction 10.2: Cavity Fundamentals 10.3: Fabry-Perot Resonators 10.4: Bragg Gratings and Bragg Mirrors 10.5: Ring Resonators 10.6: Whispering Gallery Mode Resonators 10.7: Wave Propagation in Periodic Structures: Photonic Crystals 10.8: Micropillar 10.9: Characteristics of Microcavity Chapter 11: Cavity Quantum Elecrodynamics 11.1: Introduction 11.2: Zero-Point Energy and Vacuum Field 11.3: Control of Spontaneous Emission 11.4: Mode Density in Ideal Cavities 11.5: Experimental Observation of Purcell Effect 11.6: Strong Light-Matter Coupling 11.7: Jaynes-Cummins Model 11.8: Microcavities in CQED Experiments 11.9: Applications 11.10: Microcavity Laser Chapter 12: Bose Einstein Condensation 12.1: Introduction 12.2: Elements of Bose Einstein Condensation 12.3: BEC in Semiconductors 12.4: Bulk Excitons 12.5: Indirect Excitons in Coupled QWs 12.6: Polariton 12.7: Polariton Lasers 12.8: Modeling of Electrically Driven Polariton Laser Chapter 13: Surface Plasmons 13.1: Introduction 13.2: Basic Concepts 13.3: Surface Plasmon Polaritons at Metal/Insulator Interfaces 13.4: Excitation Mechanism 13.5: Materials 13.6: Length Scales in Noble Metals 13.7: Metal-insulator Based Plasmonics-photonics 13.8: All Semiconductor Plasmonics 13.9: Plasmonic Properties of Semiconductors 13.10: Components: source, modulators, waveguides, detector 13.11: Application of Plasmonics in VLSI, Data Centres and Supercomputers 13.12: Applications of Surface Plasmons in Basic Science and Characterization 13.13: Intersubband Plasmons Chapter 14: Spasers and Plasmonic Nanolasers 14.1: Introduction 14.2: Early Investigations on SP Amplification 14.3: Models for Noginov et al Experiment 14.4: Semiconductor Spasers and Plasmonic Nanolasers 14.5: Theoretical Models by Khurgin and Sun 14.6: Current Theoretical Models and Experiments 14.7: Further Developments Chapter 15: Optical Metamaterials 15.1: Introduction 15.2: Left Handed Material with Negative RI 15.3: Structures for Microwaves 15.4: Perfect Lens 15.5: NIR with Positive Permittivity and Permeability 15.6: Low Loss Plasmonic Metamaterial 15.7: Semiconductor Metamaterials 15.8: Metasurfaces 15.9: Beam Steering Chapter 16: Nanolasers 16.1: Introduction 16.2: Parameters of Lasers 16.3: Progress in Nanolasers 16.4: Threshold Pump Power of Nanolasers: Purcell Effect 16.5: Intrinsic Merit of Nanolasers 16.6: Optical Interconnect 16.7: Metal Based Nanolasers