Semiconductor Growth, Surfaces and Interfaces

Inbunden, Engelska, 1994

AvG. J. Davies,Royal Society (Great Britain),G.J. Davies,R.H. Williams,G. J. Davies,R. H. Williams

1 369 kr

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For the first time several different diverse but related topics concerned with semiconductor growth are brought together in a single text. Techniques used to gain information about the growing surface, a crucial condition in order to design semiconductor structures in a controllable manner, are examined before efforts are made to understand the semiconductor interface from both theoretical and experimental approaches. The fabrication and evolution of surface morphology are discussed followed by investigations of the monitoring and control of the interface. Those studying semiconductor growth from any perspective should find this book useful, and it should also be useful for all in the semiconductor industry, whether applying or manufacturing. This book should be of interest to materials scientists, electronic engineers and physicists concerned with research and development in semiconductors.

Produktinformation

Utgivningsdatum1994-03-31
Mått155 x 235 x 15 mm
Vikt436 g
FormatInbunden
SpråkEngelska
Antal sidor158
Upplaga1994
FörlagChapman and Hall
ISBN9780412577307

Tillhör följande kategorier

Surface reconstruction of GaAs (001) during OMCVD growth. Optical in situ surface control during MOVPE and MBE growth. Lateral quantum size effects created by growth induced surface and interface corrugations on non-(100)-oriented substrates. Fabrication of quantum well wires and vertical quantum wells on submicron gratings by MOVPE. Evolution of surface morphology during epitaxial growth. Reaction models for the epitaxial growth of III-V semiconductors by chemical beam epitaxy. The continuing drama of the semiconductor interface. STM studies of Fermi-level pinning on the GaAs (001) surface. Probing semi-conductor interfaces by transmission electron microscopy. Monitoring growth with X-ray diffraction. Electron states at semiconductor interfaces: the intrinsic and extrinsic charge neutrality levels. Control of electrical barriers at semiconductor heterojunctions by interface doping. In situ characterization and control of compound semiconductor interfaces.