Since the advent of planar technology the literature on semi­ conductor devices has been growing exponentially. This book of over 14000 references is intended to make the world literature available to workers in the field (beginners as well as experienced) to assist them in finding out what has been done by others in their fields of endeavor. The literature on theory, preparation, properties, character­ ization, packaging, instrumentation and applications of semiconductor devices is thoroughly covered; the only aspect of preparation not covered is di ffusion. However, several books and comprehensive review articles on this subject are given in Chapter A. Radiation damage due to ion implantation is given in Chapter F. Radiation damage due to all other types of radiations is given in Chapter J. The chapters on processing technology, radiation damage, structural defects and analysis, modeling and packaging are quite general and apply to most types of semiconductor devices. Special attention is given to electrical properties and applications of FET, Schottky and charge-coupled devices in Chapters M, N, 0 and P.

Since the advent of planar technology the literature on semi­ conductor devices has been growing exponentially. This book of over 14000 references is intended to make the world literature available to workers in the field (beginners as well as experienced) to assist them in finding out what has been done by others in their fields of endeavor. The literature on theory, preparation, properties, character­ ization, packaging, instrumentation and applications of semiconductor devices is thoroughly covered; the only aspect of preparation not covered is di ffusion. However, several books and comprehensive review articles on this subject are given in Chapter A. Radiation damage due to ion implantation is given in Chapter F. Radiation damage due to all other types of radiations is given in Chapter J. The chapters on processing technology, radiation damage, structural defects and analysis, modeling and packaging are quite general and apply to most types of semiconductor devices. Special attention is given to electrical properties and applications of FET, Schottky and charge-coupled devices in Chapters M, N, 0 and P.

Since the advent of planar technology the literature on semi­ conductor devices has been growing exponentially. This book of over 14000 references is intended to make the world literature available to workers in the field (beginners as well as experienced) to assist them in finding out what has been done by others in their fields of endeavor. The literature on theory, preparation, properties, character­ ization, packaging, instrumentation and applications of semiconductor devices is thoroughly covered; the only aspect of preparation not covered is di ffusion. However, several books and comprehensive review articles on this subject are given in Chapter A. Radiation damage due to ion implantation is given in Chapter F. Radiation damage due to all other types of radiations is given in Chapter J. The chapters on processing technology, radiation damage, structural defects and analysis, modeling and packaging are quite general and apply to most types of semiconductor devices. Special attention is given to electrical properties and applications of FET, Schottky and charge-coupled devices in Chapters M, N, 0 and P.