RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

Jianjun Gao received the B.Eng. and Ph.D. degrees from the Tsinghua University, and M. Eng. Degree from Hebei Semiconductor Research Institute. From 1999 to 2001, he was a Post-Doctoral Research Fellow at the Microelectronics R&D Center, Chinese Academy of Sciences developing PHEMT optical modulator driver. In 2001, he joined the school of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore, as a Research Fellow in semiconductor device modeling and on wafer measurement. In 2003, he joined the Institute for High-Frequency and Semiconductor System Technologies, Berlin University of Technology, Germany, as a research associate working on the InP HBT modeling and circuit design for high speed optical communication. In 2004, he joined the Electronics Engineering Department, Carleton University, Canada, as Post-doctor Fellow working on the semiconductor neural network modeling technique. From 2004 to 2007, He was a Full Professor of radio engineering department at the Southeast University, Nanjing, China. Since 2007, he has been a Full professor of school of information science and technology, East China Normal University, Shanghai, China. He has been involved with the characterization, modeling and on wafer measurement of microwave semiconductor devices, optoelectronics device and high-speed integrated circuit design for 17 years. He has authored and coauthored over 80 research papers.

• Chapter 1: IntroductionChapter 2: Representation of Microwave Two-Port NetworkChapter 3: Microwave and RF Measurement TechniquesChapter 4: FET Small Signal Modeling and ParameterChapter 5: FET Nonlinear Modeling and Parameter ExtractionChapter 6: Microwave Noise Modeling and ParameterChapter 7: Artificial Neural Network Modeling Technique for FET