Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

• Contributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si_1-xGe_x) (F. Schäffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.

"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News, Vol. 25, No. 2 June 2001)"Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)

Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

• Contributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si_1-xGe_x) (F. Schäffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.

"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News, Vol. 25, No. 2 June 2001)"Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)

Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

• Contributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si_1-xGe_x) (F. Schäffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.

"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News, Vol. 25, No. 2 June 2001)"Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)