Del i serien Lecture Notes in Physics

Physics of Narrow Gap Semiconductors

Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17, 1981

Häftad, Engelska, 1982

AvE. Gornik,H. Heinrich,L. Palmetzhofer

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Produktinformation

Utgivningsdatum1982-02-01
Mått170 x 244 x undefined mm
Vikt867 g
FormatHäftad
SpråkEngelska
SerieLecture Notes in Physics
Antal sidor408
Upplaga1982
FörlagSpringer-Verlag Berlin and Heidelberg GmbH & Co. KG
ISBN9783540111917

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Materietillstånd inom Naturvetenskap och teknik

Narrow gap semiconductors — the state op the art.- Growth of some important narrow gap semiconductors.- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), ?- and ?-EuP3 and their alloys.- Tm1?xEuxSe: New narrow gap magnetic semiconductors.- Electronic properties of KxRb1?xAu , an indirect small gap semiconductor.- Growth of Sb2Te3 single crystals by hot-wall-epitaxy.- THM growth of PbTe.- Misfit strain in epitaxial IV–VI semiconductor films.- Structure defects in Pb 1-xSnxTe solid solution heterocompositions.- Influence of impurity doping on the electrical properties of LPE grown Pb1?xSnxTe and PbSeyTe1?y.- Plasma reflection spectrum of the Pb 1?xSnxTe inhomogeneous layers and vapour transport process of Pb 1?xSnxTe.- Molecular beam epitaxy of CdTe and CdxHg1?xTe.- The investigation of the second phase in Hg1?xCdxTe crystals.- Structural and electrical properties of as grown CdxHg1?xTe epitaxial layers deposited by cathodic sputtering.- Interfacial energy bands for narrow-gap semiconductors.- 2D-subbands in III–V and narrow-gap semiconductors.- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors.- Pulse width dependent nonlinear absorption in small gap semiconductors.- Photo-hall measurements of high-density photoexcited electrons in Hg1?x CdxTe.- The photoluminescence study of CdxHg1?xTe alloys.- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field.- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te.- Excess carrier lifetime in Hg1?xCdxTe by population modulation spectroscopy.- Laser threshold and recombination in Pb1?xSnxTe AND PbS1?xSex.- Optical studies of a high density electron-hole plasma iN PbTe.- Far infrared opticalproperties of Cd3P2 AND Cd3As2.- A new broadband near-millimeter wave detector using mercury-cadmium-telluride.- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER.- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure.- High resolution magneto-optical studies of free and bound hole excitations in InSb.- Two-photon spectroscopy in InSb with cw CO2 Lasers.- Uniaxial-stress-enhanced electron spin resonance in InSb.- Optical four-wave mixing in pbte epitaxial layers.- Spin-flip resonances in cadmium arsenide.- Peculiarities of the band structure of HgSe and mixed crystals Hg1?xCdxSe from the interband magnet absorption.- Bandstructure of Pb1?xGexTe in the C3v — Phase.- Band structure of cubic and rhombohedral GeTe.- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects.- Phase transitions and optical properties of IV–VI compounds.- Lattice dynamics and phase transitions in IV–VI compounds.- Pseudopotential approach to total energy calculations in narrow GAP semiconductors.- Lattice dynamics and phase transitions in IV–VI semiconducting compounds.- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys.- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1?XSnXTe and Pb 1?XGeXTe.- Coupled phase transitions in Pb1?xGexTe.- A neutron scattering study of lattice dynamics of HgTe and HgSe.- New aspects of the material and device technology of intrinsic infrared photodetectors.- HgCdTe liquid phase epitaxial growth technology.- Lattice-matched PbSnTe/PbTeSe heterostructure device technology.- Lead chalcogenide diode lasers: State of the art and applications.- Magnetic properties of semimagnetic semiconductors.- Magnetizationof narrow gap semimagnetic semiconductors Hg1?xMnxTe AND Hg1?xMnxSe.- Microwave and far infrared magnetotransmission studies in Hg1?xMnxSe.- Acceptor states in semimagnetic semiconductors in a magnetic field.- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1?x?yCdxMnyTe.- Infrared magnetoabsorption in zero gap Hg1?xFexTe and Hg1?xFexSe mixed crystals.- The quantum transport and the magnetic levels in Pb1?xMnxTe.- Shubnikov-de Haas effects in (Cd1?xMnx)3As2 alloys.- Theory of magnetic susceptibility of narrow gap semiconductors.- Advances in synthesized superlattices.- Electronic properties of graphite intercalation compounds.- Comparison of transport properties in various semimetals systems.- Optical properties of PbTe-Pb1?xSnxTe superlattices prepared by a hot wall technique.- Screening of impurities in strong magnetic fields and its influence on the transverse conductivity.- Anomalous behaviour of the magnetoresistance of Hg1?xCdxTe in the extreme quantum limit.- Stationary and time-resolved magnetotransport in n-TYPE Hg0.8Cd0.2Te and n-type InSb in the extreme magnetic quantum limit.- Modification of the classical magnetic freeze-out manifestations in n-type Hg1?xCdxTe(x > 18%) due to the presence of resonant levels.- Ionized-defect-scattering mobility in n-PbTe.- High pressure electron mobility in low electron concentration InSb samples at 77K.- Shubnikov de Haas oscillations in Cd3?xZnxAs2 alloys.- Bi2Se3 and Bi2Te3 single crystals doped with Sn atoms.- Ultrasonic anomaly near zero-gap state in CdxHgl1?xSe.- Size effects in thin semimetal wires.- Pressure spectroscopy of localized levels.- First order phase transition of Hall coefficient versus magnetic field, under hydrostatic pressure due to freeze-out onacceptor state in Hg0.836Cd0.164Te.- Nonradiative recombination at deep impurity levels in p-type Hg1–xCdxTe.- On the thermodynamic instability of n-type HgCdTe, and on acceptor levels, transport properties, and liftime of p-type HgCdTe.- Ion-implantation-induced defect levels in Pb1?xSnxTe.- Photoluminescence CF Pb1?xSnxTe (x ? 0.2) crystals doped with Cd and In.- Energy levels of native defects in n-Pb1-xSnxSe.- Localized “deep” defect states in PbSexTe1?x mixed crystals.- Strong coupling between the resonant state and the crystal lattice in n-InSb.- Binding energies of charged impurity centres in narrow gap materials with large lattice polarizability.- The widening application of narrow-gap semiconductors — closing address at the 4th international conference on the physics of narrow-gap semiconductors.

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