Physics and Chemistry of Carbides, Nitrides and Borides

Name: Physics and Chemistry of Carbides, Nitrides and Borides
SKU: 9780792308706
Price: 4319 SEK
Availability: InStock
Author: R. Freer
ISBN: 9780792308706

Inbunden, Engelska, 1990

AvR. Freer

4 319 kr

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Proceedings of the NATO Advanced Research Workshop, Manchester, UK, September 18-22, 1989

Produktinformation

Utgivningsdatum1990-09-30
Mått156 x 234 x 45 mm
Vikt1 276 g
FormatInbunden
SpråkEngelska
SerieNATO Science Series E:
Antal sidor734
Upplaga1990
FörlagKluwer Academic Publishers
ISBN9780792308706

Tillhör följande kategorier

Maskinteknik och material inom Naturvetenskap och teknik

I. Powders, Ceramics and Single Crystals — Preparation and Characterisation.- Chemical Routes for the Preparation of Powders.- Silicon Nitride: Relations Between Powder Characteristics and Sinterability.- Kinetics of the Nitridation of Silicon.- Lanthanum Silicon Oxynitrides, Synthesis and X-Ray Diffraction and IR Studies.- Synthesis of Silicon Carbide of Different Morphologies and the Effect of Second Phase in Ceramic Composites.- Laboratory Methods for the Preparation of Boron Carbides.- Preparation and Properties of Icosahedral Borides.- Production, Fabrication and Uses of Borides.- Laser Ablation ICP-MS Analysis of Ceramic Materials.- II. Synthetic Diamond — Preparation and Properties.- Metastable Synthesis of Diamond.- Selected-Area Deposition of Diamond Films.- Surface Analysis of Diamond Nucleation on Silicon and Electron Microscopy of the Diamond/Silicon Interface.- Electrical Properties of B Doped CVD Grown Polycrystalline Diamond Films.- III. Structure, Crystal Chemistry, Phase Equilibria, Defects and Mass Transport.- Silicon Carbide: Structure and Polytypic Transformations.- Crystal-Chemistry of Transition Metal Hemicarbides.- Structure and Properties of Si-Doped Boron Carbide.- Actinoidmetal Boron Carbides.- Defects and Grain Boundaries in High Temperature Deformed ?-SiC.- Application of Transmission Electron Microscopy to the Study of Transition Metal Carbides.- Defect Structures and Order-Disorder Transformations in Transition Metal Carbides and Nitrides.- Mass Transport in Carbides and Nitrides.- IV. Thermal, Chemical and Mechanical Stability.- Thermal Shock and Corrosion of SiC — A Combustion Chamber Model Case Study.- High Temperature Corrosion of Silicon Nitrides (abstract only).- Corrosion and Mechanical Properties of Silicon Nitride BasedCeramics. Influence of Microstructural Changes.- The Role of Oxygen in Non-Oxide Engineering Ceramics.- Thermochemical Predictions of Metal-Metal Carbide Stabilities in Relation to WC and WC-Co Production.- Si3N4-SiC Composites.- Boride-Carbide Composites: TiB2-TiC-SiC.- V. Theoretical Studies.- Electronic Structure of Stoichiometric and Non-Stoichiometric Titanium Carbides and Nitrides.- Further Electronic Structure Studies of Boron and Boron-Rich Borides.- The Electronic Structure of Crystalline Boron Carbide I: B12 Icosahedra and C-B-C Chains.- Electronic Structure of Lithium Boride Li3B14.- VI. Bulk Materials and Thin Films — Electrical, Optical and Thermal Properties.- Optical and Electronic Properties of SiC.- Recent Advances Regarding the Definition of the Atomic Environment, Film Growth and Microelectronic Device Development in Silicon Carbide.- Thermal Conductivity of Transition Metal Carbides.- The Dielectric Properties of Nitrides.- Current Status of the Research on III-V Mononitride Thin Films for Electronic and Optoelectronic Applications.- Short Range Order in “Amorphous” Thin Films of Titanium Diboride.- On the Electronic Transport Properties of Boron Carbide.- Theory of Electronic and Thermal Transport in Boron Carbides.- Optical Properties of Boron-Rich Solids with Icosahedral Structure.- Compound and System Index.

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