Optical Properties of III–V Semiconductors

Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. This monograph is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on performance features in opto-electronic devices. The optical response of such materials with multi-valley band structures is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, and electron-hole droplet formation for example. The discussion is self-consistent with the dynamics of excitons and carriers from intervalley compiling.