On the Mathematical Modeling of Memristor, Memcapacitor, and Meminductor

Ahmed G. Radwan, Senior IEEE Member, Ph.D., is an Associate Professor at the Faculty of Engineering, Cairo University, and also at the Nanoelectronics Integrated Systems Center, Nile University, Egypt. His research interests include chaotic, fractional order, and memristor-based systems. He is the recipient of several awards in Mathematical and Engineering Sciences and has published over 100 international research papers, several US patents, several book chapters and three books ("Analog circuit design in the fractional order domain", “Practical testing mythologies for detecting hard and soft faults in analog digital circuits”, "Memristor-based multilevel arithmetic circuit"). Mohammed Fouda, is an assistant lecturer, Faculty of Engineering, Cairo University, Egypt. His research interests include Mem-element-based circuits and analog circuits. He has more than 20 international journal and conference papers. He won the best paper award in ICM 2013 in Lebanon.

• Introduction.- Memristor: Models, Types and Applications.- Memristor Mathematical Models and Emulators.- Memristor-based Relaxation Oscillator Circuits.- Memristor-based Multilevel Digital Systems.- Memcapacitor: Modelling, Analysis and Emulators.- Memcapacitor based applications.- Meminductor: Modelling, Analysis and Emulators.

"The book, organized on seven chapters, deals with the modeling, analysis and applications of memelements ... . The book is interesting and can be used by researchers interested in memelements from the theoretical point of view as well as for a number of practical applications." (Liviu Goras, zbMATH 1334.94003, 2016) Among the numerous books and monographs published so far on the memristor, memcapacitor, and meminductor, the Radwan-Fouda book stands out as the most comprehensive, scholarly, and timely. The book has both depth and breadth - it covers practically all aspects of memory circuit elements that have been published in the literature, including important contributions from the authors themselves. Each chapter is carefully organized, well-illustrated, and written pedagogically so even the uninitiated will find it to be eminently readable. The references are comprehensive and surprisingly up-to-date, including some obscure papers and several future papers that have not yet seen the light of day. Every serious researchers on memristors, memcapacitor, and meminductors will find this book indispensable. Leon Chua USA, Feb. 2015