Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.

• Section I: Semiconductor MaterialsElectrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit ModelsMonolithic Integration of Carbon Nanotubes and CMOSFacile, Scalable, and Ambient—Electrochemical Route for Titania Memristor FabricationSpin Transport in Organic Semiconductors: A Brief Overview of the First Eight YearsSection II: Silicon Devices and TechnologySiGe BiCMOS Technology and DevicesUltimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power ParadigmDevelopment of 3D Chip Integration TechnologyEmbedded Spin–Transfer–Torque MRAMNonvolatile Memory Device: Resistive Random Access MemoryDRAM TechnologyMonocrystalline Silicon Solar Cell Optimization and ModelingRadiation Effects on Silicon DevicesSection III: Compound Semiconductor Devices and TechnologyGaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth TechnologyGaN HEMTs Technology and ApplicationsSurface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide-Semiconductor High-Electron Mobility TransistorsGaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature DevicesGaAs HBT and Power Amplifier Design for Handset TerminalsResonant Tunneling and Negative Differential Resistance in III-NitridesNew Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors

Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.

• Section I: Semiconductor MaterialsElectrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit ModelsMonolithic Integration of Carbon Nanotubes and CMOSFacile, Scalable, and Ambient—Electrochemical Route for Titania Memristor FabricationSpin Transport in Organic Semiconductors: A Brief Overview of the First Eight YearsSection II: Silicon Devices and TechnologySiGe BiCMOS Technology and DevicesUltimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power ParadigmDevelopment of 3D Chip Integration TechnologyEmbedded Spin–Transfer–Torque MRAMNonvolatile Memory Device: Resistive Random Access MemoryDRAM TechnologyMonocrystalline Silicon Solar Cell Optimization and ModelingRadiation Effects on Silicon DevicesSection III: Compound Semiconductor Devices and TechnologyGaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth TechnologyGaN HEMTs Technology and ApplicationsSurface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide-Semiconductor High-Electron Mobility TransistorsGaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature DevicesGaAs HBT and Power Amplifier Design for Handset TerminalsResonant Tunneling and Negative Differential Resistance in III-NitridesNew Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors

Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.

• Section I: Semiconductor MaterialsElectrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit ModelsMonolithic Integration of Carbon Nanotubes and CMOSFacile, Scalable, and Ambient—Electrochemical Route for Titania Memristor FabricationSpin Transport in Organic Semiconductors: A Brief Overview of the First Eight YearsSection II: Silicon Devices and TechnologySiGe BiCMOS Technology and DevicesUltimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power ParadigmDevelopment of 3D Chip Integration TechnologyEmbedded Spin–Transfer–Torque MRAMNonvolatile Memory Device: Resistive Random Access MemoryDRAM TechnologyMonocrystalline Silicon Solar Cell Optimization and ModelingRadiation Effects on Silicon DevicesSection III: Compound Semiconductor Devices and TechnologyGaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth TechnologyGaN HEMTs Technology and ApplicationsSurface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide-Semiconductor High-Electron Mobility TransistorsGaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature DevicesGaAs HBT and Power Amplifier Design for Handset TerminalsResonant Tunneling and Negative Differential Resistance in III-NitridesNew Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors