Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET

Dr. Nabil Shovon Ashraf was born in Dhaka, Bangladesh in 1974. Currently, Dr. Ashraf serves as an Associate Professor in the Department of Electrical and Computer Engineering of North South University, Dhaka, Bangladesh where he had previously served as an Assistant Professor from September 2014-June 2018. He obtained a Bachelor of Technology degree in Electrical Engineering from Indian Institute of Technology Kanpur, India in 1997. He obtained a Master of Science degree in Electrical Engineering from University of Central Florida, Orlando, USA in 1999. In 2011, he obtained his Ph.D. in Electrical Engineering from Arizona State University, Tempe, USA. From December 2011-May 2014, he wasa Post Doctoral Researcher in the department of Electrical Engineering of Arizona State University Tempe. He was employed as design engineer in RF Monolithics Inc., a surface acoustic wave-based filter design company in Dallas, Texas, USA from August 1999-March 2001. From October 2003–June 2006, he served on the faculty as Assistant Professor of the Department of Electrical and Electronic Engineering at the Islamic University of Technology, Gazipur, Bangladesh. To date Dr. Ashraf has published 6 peer-reviewed journal articles (two IEEE EDS) and 15 international conference proceedings (3 IEEE EDS). In 2016, he published New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation with Morgan & Claypool and contributed to two book chapters on interface trap-induced threshold voltage fluctuations in the presence of random channel dopants of scaled n-MOSFET at the invitations of highly accomplished international book editors.

• Preface.- Acknowledgments.- Introduction.- Historical Perspectives of Scaled MOSFET Evolution.- Simulation Results of On-State Drain Current and Subthreshold Drain Current at Substrate Temperatures Below 300 K.- Simulation Results on Substrate Mobility and On-Channel Mobility of Conventional Long-Channel ??-MOSFET at Substrate Temperatures 300 K and below.- Simulation Outcomes of Subthreshold Slope Factor or Coefficient for Different Substrate Temperatures at the Vicinity of a Subthreshold Region to Deep Subthreshold Region of a Long-Channel ??-MOSFET.- Review of Scaled Device Architectures for Their Feasibility To Low-Temperature Operation Simulation Perspectives of the Author's Current Research.- Summary of Research Results and Conclusions.- References.- Author's Biography.