Dr Bernard Gil, Goupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case Courier 074, F-34095 Montpellier Cedex 5, France. Tel: +33 4 67 14 39 24, Fax: +33 4 67 14 37 60. Email: gil@ges.univ-montp.fr

• 1. Gallium nitride or The history of a scientific explosion driven by applications and markets ; 2. Nitrides as seen by a theorist ; 3. The homoepitaxial challenge for low-dimensional nitrides ; 4. HVPE - GaN quasi-substrates for nitride device structures ; 5. Growth optimization of low-dimensional nitrides by metalorganic vapor phase epitaxy and dislocation control ; 6. The growth of low-dimensional nitrides by molecular beam epitaxy ; 7. Topological defects and low-dimensional nitride layers ; 8. Excitons in GaN-based low-dimensional systems ; 9. Indium gallium nitride ; 10. The optical properties of InGaN-based quantum wells and quantum dots ; 11. Electron-phonon interactions in GaN and its low-dimensional structures ; 12. Low-dimensional nitrides: A laboratory for ultrafast physics ; 13. Opto-electronic devices based on low-dimensional nitride heterostructures ; 14. GaN-based modulation doped FETs ; 15. Mixed III-V-N semiconductors: A challenge for tomorrow?

For the immediate future this volume will serve very well those who need to gain insights into specific aspects of nitride materials physics. The dynamic range of the contributions should ensure that most interested readers will find a viewpoint that coincides with their own requirements.