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Introductory Nanoelectronics

Physical Theory and Device Analysis

Häftad, Engelska, 2022

AvVinod Kumar Khanna

859 kr

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This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter. Introduces the basic concepts underlying the operation of nanoelectronic devices. Offers a broad overview of the field, including state-of-the-art developments. Covers the relevant quantum and solid-state physics and nanoelectronic device principles. Written in lucid language with accessible mathematical treatment. Includes extensive end-of-chapter exercises and many insightful diagrams.

Produktinformation

Utgivningsdatum2022-04-29
Mått138 x 216 x 24 mm
Vikt902 g
FormatHäftad
SpråkEngelska
Antal sidor446
FörlagTaylor & Francis Ltd
ISBN9780367504038

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Nanoelectronics and Mesoscopic Physics. Part I: Quantum Mechanics for Nanoelectronics. Origins of Quantum Theory. The Schrodinger Wave Equation. Operator Methods and Postulates of Quantum Mechanics. Particle-in-a-Box and Related Problems. The Hydrogen Atom. Part II: Condensed Matter Physics for Nanoelectronics. Drude-Lorentz Free Electron Model. Sommerfield Free Electron Fermi Gas Model. Kronig-Penney Periodic Potential Model. Part III: Electron Behavior in Nanostructures. Quantum Confinement and Electronic Structure of Quantum Dots. Electrons in Quantum Wires and Landauer-Büttiker Formalism. Electrons in Quantum Wells. Part IV: Green’s Function Method for Nanoelectronic Device Modeling. Dirac Delta and Green’s Function Preliminaries. Method of Finite Differences and Self Energy of the Leads. Non-Equilibrium Green’s Function (NEGF) Formalism. Part V: Fabrication and Characterization of Nanostructures. Fabrication Tools. Characterization Facilities. Part VI: Exemplar Nanoelectronic Devices. Resonant Tunneling Diodes. Nanoscale MOSFETs and Similar Devices. High-Electron Mobility Transistors. Single Electron Transistors. Heterostructure Optoelectronic Devices. Index