Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium

• IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by photo-injectionElectrical characteristicsTheory of defects in high-k materialsBonding constraints and defect formation at Si/high-k interfacesBand alignment calculationsElectron mobility at the Si/high-k interfaceModel for defect generation during electrical stressTechnological aspectsDevice integration issuesDevice concepts for sub-100 nm CMOS technologiesTransistor characteristicsNonvolatile memories based on high-k ferroelectric layers

Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium

• IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by photo-injectionElectrical characteristicsTheory of defects in high-k materialsBonding constraints and defect formation at Si/high-k interfacesBand alignment calculationsElectron mobility at the Si/high-k interfaceModel for defect generation during electrical stressTechnological aspectsDevice integration issuesDevice concepts for sub-100 nm CMOS technologiesTransistor characteristicsNonvolatile memories based on high-k ferroelectric layers

Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium

• IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by photo-injectionElectrical characteristicsTheory of defects in high-k materialsBonding constraints and defect formation at Si/high-k interfacesBand alignment calculationsElectron mobility at the Si/high-k interfaceModel for defect generation during electrical stressTechnological aspectsDevice integration issuesDevice concepts for sub-100 nm CMOS technologiesTransistor characteristicsNonvolatile memories based on high-k ferroelectric layers