Guide to State-of-the-Art Electron Devices

Edited byProf. Dr. Joachim N. BurghartzInstitute for Microelectronics Stuttgart, Germany

• Foreword xiPreface xiiiContributors xviiAcknowledgments xixIntroduction: Historic Timeline xxiPart I Basic Electron Devices1 Bipolar Transistors 3John D. Cressler and Katsuyoshi Washio1.1 Motivation 31.2 The pn Junction and its Electronic Applications 51.3 The Bipolar Junction Transistor and its Electronic Applications 101.4 Optimization of Bipolar Transistors 151.5 Silicon-Germanium Heterojunction Bipolar Transistors 17References 192 MOSFETs 21Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong2.1 Introduction 212.2 MOSFET Basics 212.3 The Evolution of MOSFETs 272.4 Closing Remarks 31References 313 Memory Devices 37Kinam Kim and Dong Jin Jung3.1 Introduction 373.2 Volatile Memories 393.3 Non-Volatile Memories 413.4 Future Perspectives of MOS Memories 433.5 Closing Remarks 45References 464 Passive Components 49Joachim N. Burghartz and Colin C. McAndrew4.1 Discrete and Integrated Passive Components 494.2 Application in Analog ICs and DRAM 524.3 The Planar Spiral Inductor–A Case Study 544.4 Parasitics in Integrated Circuits 57References 575 Emerging Devices 59Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh5.1 Non-Charge-Based Switching 595.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 635.3 Closing Remarks 66References 67Part II Aspects of Device and Ic Manufacturing6 Electronic Materials 71James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu6.1 Introduction 716.2 Silicon Device Technology 716.3 Compound Semiconductor Devices 756.4 Electronic Displays 796.5 Closing Remarks 82References 837 Compact Modeling 85Colin C. McAndrew and Laurence W. Nagel7.1 The Role of Compact Models 857.2 Bipolar Transistor Compact Modeling 877.3 MOS Transistor Compact Modeling 897.4 Compact Modeling of Passive Components 927.5 Benchmarking and Implementation 94References 948 Technology Computer Aided Design 97David Esseni, Christoph Jungemann, Jürgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi8.1 Introduction 978.2 Drift-Diffusion Model 988.3 Microscopic Transport Models 1008.4 Quantum Transport Models 1018.5 Process and Equipment Simulation 102References 1059 Reliability of Electron Devices, Interconnects and Circuits 107Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak9.1 Introduction and Background 1079.2 Device Reliability Issues 1099.3 Circuit-Level Reliability Issues 1149.4 Microscopic Approaches to Assuring Reliability of ICs 117References 11710 Semiconductor Manufacturing 121Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold10.1 Introduction 12110.2 Substrates 12210.3 Lithography and Etching 12210.4 Front-End Processing 12410.5 Back-End Processing 12510.6 Process Control 12810.7 Assembly and Test 12910.8 Future Directions 131References 131Part III Applications Based on Electron Devices11 VLSI Technology and Circuits 135Kaustav Banerjee and Shuji Ikeda11.1 Introduction 13511.2 MOSFET Scaling Trends 13611.3 Low-Power and High-Speed Logic Design 13711.4 Scaling Driven Technology Enhancements 13911.5 Ultra-Low Voltage Transistors 14411.6 Interconnects 14411.7 Memory Design 14811.8 System Integration 150References 15212 Mixed-Signal Technologies and Integrated Circuits 157Bin Zhao and James A. Hutchby12.1 Introduction 15712.2 Analog/Mixed-Signal Technologies in Scaled CMOS 15912.3 Data Converter ICs 16112.4 Mixed-Signal Circuits for Low Power Displays 16412.5 Image Sensor Technologies and Circuits 166References 16813 Memory Technologies 171Stephen Parke, Kristy A. Campbell and Chandra Mouli13.1 Semiconductor Memory History 17113.2 State of Mainstream Semiconductor Memory Today 17813.3 Emerging Memory Technologies 18313.4 Closing Remarks 185References 18614 RF and Microwave Semiconductor Technologies 189Giovanni Ghione, Fabrizio Bonani, Ruediger Quay and Erich Kasper14.1 III-V-Based: GaAs and InP 18914.2 Si and SiGe 19414.3 Wide Bandgap Devices (Group-III Nitrides, SiC and Diamond) 197References 19915 Power Devices and ICs 203Richard K. Williams, Mohamed N. Darwish, Theodore J. Letavic and Mikael Östling15.1 Overview of Power Devices and ICs 20315.2 Two-Carrier and High-Power Devices 20515.3 Power MOSFET Devices 20615.4 High-Voltage and Power ICs 20915.5 Wide Bandgap Power Devices 210References 21116 Photovoltaic Devices 213Steven A. Ringel, Timothy J. Anderson, Martin A. Green, Rajendra Singh and Robert J. Walters16.1 Introduction 21316.2 Silicon Photovoltaics 21516.3 Polycrystalline Thin-Film Photovoltaics 21816.4 III-V Compound Photovoltaics 21916.5 Future Concepts in Photovoltaics 220References 22217 Large Area Electronics 225Arokia Nathan, Arman Ahnood, Jackson Lai and Xiaojun Guo17.1 Thin-Film Solar Cells 22517.2 Large Area Imaging 22917.3 Flat Panel Displays 233References 23518 Microelectromechanical Systems (MEMS) 239Darrin J. Young and Hanseup Kim18.1 Introduction 23918.2 The 1960s – First Micromachined Structures Envisioned 23918.3 The 1970s – Integrated Sensors Started 24018.4 The 1980s – Surface Micromachining Emerged 24118.5 The 1990s – MEMS Impacted Various Fields 24418.6 The 2000s – Diversified Sophisticated Systems Enabled by MEMS 24718.7 Future Outlook 248References 24819 Vacuum Device Applications 251David K. Abe, Baruch Levush, Carter M. Armstrong, Thomas Grant and William L. Menninger19.1 Introduction 25119.2 Traveling-Wave Devices 25219.3 Klystrons 25519.4 Inductive Output Tubes 25819.5 Crossed-Field Devices 25919.6 Gyro-Devices 260References 26220 Optoelectronic Devices 265Leda Lunardi, Sudha Mokkapati and Chennupati Jagadish20.1 Introduction 26520.2 Light Emission in Semiconductors 26620.3 Photodetectors 26820.4 Integrated Optoelectronics 26920.5 Optical Interconnects 27120.6 Closing Remarks 271References 27121 Devices for the Post CMOS Era 275Wilfried Haensch21.1 Introduction 27521.2 Devices for the 8-nm Node with Conventional Materials 27721.3 New Channel Materials and Devices 28221.4 Closing Remarks 287References 287Index 291

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