Gallium Nitride Electronics

Inbunden, Engelska, 2008

AvRüdiger Quay

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Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics.

Produktinformation

Utgivningsdatum2008-04-21
Mått155 x 235 x 36 mm
Vikt1 008 g
FormatInbunden
SpråkEngelska
SerieSpringer Series in Materials Science
Antal sidor470
Upplaga2008
FörlagSpringer-Verlag Berlin and Heidelberg GmbH & Co. KG
ISBN9783540718901

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Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His scientific interests include RF-semiconductor device and process development, heterostructure device modeling and simulation, and circuit and reliability issues. Rüdiger Quay currently is a research engineer at Fraunhofer Institute for Applied Solid-State Physics (IAF) in Freiburg, Germany, involved in the development and large-signal characterization of high-power and high-speed AlGaN/GaN amplifiers and the development of high-speed InP HBTs for high data rate communication at 80~Gbit/s and beyond.