Fundamentals of Silicon Carbide Technology

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan.Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication.  He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences.  He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices. James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USAProfessor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T’s first microprocessor and investigated nonlinear transport in silicon inversion layers.  His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide.  He has co-authored over 250 technical papers and conference presentations.

• About the Authors xiPreface xiii1 Introduction 11.1 Progress in Electronics 11.2 Features and Brief History of Silicon Carbide 31.3 Outline of This Book 6References 62 Physical Properties of Silicon Carbide 112.1 Crystal Structure 112.2 Electrical and Optical Properties 162.3 Thermal and Mechanical Properties 302.4 Summary 32References 333 Bulk Growth of Silicon Carbide 393.1 Sublimation Growth 393.2 Polytype Control in Sublimation Growth 463.3 Defect Evolution and Reduction in Sublimation Growth 503.4 Doping Control in Sublimation Growth 593.5 High-Temperature Chemical Vapor Deposition 643.6 Solution Growth 663.7 3C-SiC Wafers Grown by Chemical Vapor Deposition 673.8 Wafering and Polishing 673.9 Summary 69References 694 Epitaxial Growth of Silicon Carbide 754.1 Fundamentals of SiC Homoepitaxy 754.2 Doping Control in SiC CVD 904.3 Defects in SiC Epitaxial Layers 934.4 Fast Homoepitaxy of SiC 1054.5 SiC Homoepitaxy on Non-standard Planes 1074.6 SiC Homoepitaxy by Other Techniques 1104.7 Heteroepitaxy of 3C-SiC 1114.8 Summary 114References 1155 Characterization Techniques and Defects in Silicon Carbide 1255.1 Characterization Techniques 1255.2 Extended Defects in SiC 1555.3 Point Defects in SiC 1655.4 Summary 179References 1806 Device Processing of Silicon Carbide 1896.1 Ion Implantation 1896.2 Etching 2086.3 Oxidation and Oxide/SiC Interface Characteristics 2126.4 Metallization 2486.5 Summary 262References 2637 Unipolar and Bipolar Power Diodes 2777.1 Introduction to SiC Power Switching Devices 2777.2 Schottky Barrier Diodes (SBDs) 2827.3 pn and pin Junction Diodes 2867.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes 296References 3008 Unipolar Power Switching Devices 3018.1 Junction Field-Effect Transistors (JFETs) 3018.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) 312References 3509 Bipolar Power Switching Devices 3539.1 Bipolar Junction Transistors (BJTs) 3539.2 Insulated-Gate Bipolar Transistors (IGBTs) 3739.3 Thyristors 392References 41510 Optimization and Comparison of Power Devices 41710.1 Blocking Voltage and Edge Terminations for SiC Power Devices 41710.2 Optimum Design of Unipolar Drift Regions 43510.3 Comparison of Device Performance 440References 44311 Applications of Silicon Carbide Devices in Power Systems 44511.1 Introduction to Power Electronic Systems 44511.2 Basic Power Converter Circuits 44611.3 Power Electronics for Motor Drives 45811.4 Power Electronics for Renewable Energy 47111.5 Power Electronics for Switch-Mode Power Supplies 47611.6 Performance Comparison of SiC and Silicon Power Devices 481References 48612 Specialized Silicon Carbide Devices and Applications 48712.1 Microwave Devices 48712.2 High-Temperature Integrated Circuits 49712.3 Sensors 499References 509Appendix A Incomplete Dopant Ionization in 4H-SiC 511References 515Appendix B Properties of the Hyperbolic Functions 517Appendix C Major Physical Properties of Common SiC Polytypes 521C. 1 Properties 521C. 2 Temperature and/or Doping Dependence of Major Physical Properties 522References 523Index 525

“Students or working professionals interested in SiC technology will find this book worth reading.”  (IEEE Electrical Insulation Magazine, 1 November 2015)“If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems designers. It really is the book to have on SiC, and because of its breadth as well as depth, would be a good supplement to solid - state physics or electronics books, device design or SPICE modeling, or to provide a solid foundation for circuit design with SiC devices.”  (How2Power.com, 1 March 2015)