• Introduction: The Transistor as a Black Box; Review of Semiconductors I; The Transistor - Review of Semiconductors II; The MOSFET: A Barrier-Controlled Device; MOSFET IV: Traditional Approach; MOSFET IV: The Virtual Source Model; MOS Electrostatics: Poisson Equation and the Depletion Approximation; The Gate Voltage; Bulk MOS: Subthreshold/Above Threshold; ETSOI MOS: Subthreshold/Above Threshold; 2D MOS Electrostatics; The VS Model Again; The Ballistic Nanotransistor: The Landauer Approach to Carrier Transport; Modes; The Ballistic MOSFET; Ballistic Injection Velocity; Connection to VS Model; Comparison to Experimental Results; The Quasi-Ballistic Nanotransistor: Carrier Scattering in Semiconductors; Transmission and Mean-Free-Path; The Quasi-Ballistic MOSFET; Mobility and Drain Current; Connection to the VS Model; Comparison to Experimental Results; Fundamental and Practical Limits: Fundamental Limits; Practical Limits; Heterostructure Transistors: FETs and HBTs: Heterostructure FETs; Heterostructure BJTs; Digital and Analog Circuits: The CMOS Inverter; CMOS Logic Performance; Analog/RF CMOS; Wrap-up.

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• Introduction: The Transistor as a Black Box; Review of Semiconductors I; The Transistor - Review of Semiconductors II; The MOSFET: A Barrier-Controlled Device; MOSFET IV: Traditional Approach; MOSFET IV: The Virtual Source Model; MOS Electrostatics: Poisson Equation and the Depletion Approximation; The Gate Voltage; Bulk MOS: Subthreshold/Above Threshold; ETSOI MOS: Subthreshold/Above Threshold; 2D MOS Electrostatics; The VS Model Again; The Ballistic Nanotransistor: The Landauer Approach to Carrier Transport; Modes; The Ballistic MOSFET; Ballistic Injection Velocity; Connection to VS Model; Comparison to Experimental Results; The Quasi-Ballistic Nanotransistor: Carrier Scattering in Semiconductors; Transmission and Mean-Free-Path; The Quasi-Ballistic MOSFET; Mobility and Drain Current; Connection to the VS Model; Comparison to Experimental Results; Fundamental and Practical Limits: Fundamental Limits; Practical Limits; Heterostructure Transistors: FETs and HBTs: Heterostructure FETs; Heterostructure BJTs; Digital and Analog Circuits: The CMOS Inverter; CMOS Logic Performance; Analog/RF CMOS; Wrap-up.

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• Introduction: The Transistor as a Black Box; Review of Semiconductors I; The Transistor - Review of Semiconductors II; The MOSFET: A Barrier-Controlled Device; MOSFET IV: Traditional Approach; MOSFET IV: The Virtual Source Model; MOS Electrostatics: Poisson Equation and the Depletion Approximation; The Gate Voltage; Bulk MOS: Subthreshold/Above Threshold; ETSOI MOS: Subthreshold/Above Threshold; 2D MOS Electrostatics; The VS Model Again; The Ballistic Nanotransistor: The Landauer Approach to Carrier Transport; Modes; The Ballistic MOSFET; Ballistic Injection Velocity; Connection to VS Model; Comparison to Experimental Results; The Quasi-Ballistic Nanotransistor: Carrier Scattering in Semiconductors; Transmission and Mean-Free-Path; The Quasi-Ballistic MOSFET; Mobility and Drain Current; Connection to the VS Model; Comparison to Experimental Results; Fundamental and Practical Limits: Fundamental Limits; Practical Limits; Heterostructure Transistors: FETs and HBTs: Heterostructure FETs; Heterostructure BJTs; Digital and Analog Circuits: The CMOS Inverter; CMOS Logic Performance; Analog/RF CMOS; Wrap-up.

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