Häftad, Engelska, 2000
Del i serien NATO Science Series II: Mathematics, Physics and Chemistry
Defects in SiO2 and Related Dielectrics: Science and Technology
Av Gianfranco Pacchioni, Linards Skuja, David L. Griscom
2809 kr
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Beskrivning
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Produktinformation
- Utgivningsdatum: 2000-12-31
- Mått: 160 x 240 x 34 mm
- Vikt: 949 g
- Format: Häftad
- Språk: Engelska
- Serie: NATO Science Series II: Mathematics, Physics and Chemistry
- Antal sidor: 624
- Upplaga: 2000
- Förlag: Kluwer Academic Publishers
- ISBN: 9780792366867
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