Defects and Impurities in Silicon Materials

Prof. Yutaka Yoshida Since 2004 Yutaka Yoshida is professor in Materials and Bio Science at Shizuoka Institute of Science and Technology (SIST) Japan. He is also the director of SIST Advanced instrumental analysis center. After obtaining his doctoral degree from Osaka University under the guidance of emeritus Professor F.E. Fujita, and he stayed in the group of Professor Gero Vogl as a guest scientist at the Hahn-Meitner Institute Berlin, Germany, in the period between 1983 and 1985, and 1990, and also as a research assistant at the Institute of solid state physics, Universität Wien, Austria, between 1986 and 1989. Since 1993 he is a guest Scientist at the RIKEN, Japan. He served for the chairperson of ICAME 2011 at Kobe and also will be the chairperson for 7th Forum of Science and Technology of Silicon Materials 2014 (Hamamatsu). Prof.Guido Langouche Since 2010 Guido Langouche is emeritus professor in nuclear solid state physics at the University of Leuven. After obtaining his doctoral and habilitation degrees from K.U. Leuven, he was post-doc at the universities of Stanford and Groningen and guest professor at the universities of Osaka, Lyon and Kinshasa. From 1995 till 2005 he was vice-rector of K.U. Leuven. From 2005 till 2010 he was chairman of the Coimbra Group, an academic collaboration network of 40 of Europe’s longest-established research-intensive universities. He was also vice-president of NVAO, the Accreditation Agency for the Netherlands and Flanders, residing in The Hague, where he was appointed in 2007 jointly by the Dutch and Flemish Ministers of Education. Since 2011 he is also Secretary of INQAAHE, the International Network for Quality Assurance Agencies in Higher Education. He is editor-in-chief of the Hyperfine Interactions journal.

• Diffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.