Defect Complexes in Semiconductor Structures

Proceedings of the International School Held in Mátrafüred, Hungary, September 13 – 17, 1982

Häftad, Engelska, 1983

Av J. Giber, F. Beleznay, I. C. Szep, J. Laszlo

1 409 kr

Beställningsvara. Skickas inom 7-10 vardagar

Fri frakt för medlemmar vid köp för minst 249 kr.

Produktinformation

Utgivningsdatum1983-02-01
Mått170 x 244 x 18 mm
Vikt555 g
SpråkEngelska
SerieLecture Notes in Physics
Antal sidor311
FörlagSpringer-Verlag Berlin and Heidelberg GmbH & Co. KG
EAN9783540119869

Du kanske också är intresserad av

Secondary Ion Mass Spectrometry SIMS III

Secondary Ion Mass Spectrometry SIMS III

A. Benninghoven, J. Giber, J. Laszlo, M. Riedel, H.W. Werner, H. W. Werner

1 409 kr

New Developments in Semiconductor Physics

New Developments in Semiconductor Physics

F. Beleznay, G. Ferenczi, J. Giber

709 kr

New Developments in Semiconductor Physics

New Developments in Semiconductor Physics

George Ferenczi, F. Beleznay

709 kr

De fenomenala fruntimren på Grand Hôtel

4 pocket för 3

Del 1

De fenomenala fruntimren på Grand Hôtel

Ruth Kvarnström-Jones

125 kr

Charlies hämnd

Nyhet

Del 1

Charlies hämnd

Simona Ahrnstedt

79 kr125 kr

Caminando Spanska Nybörjare Lärobok inkl ljud

Caminando Spanska Nybörjare Lärobok inkl ljud

Elisabet Waldenström, Ninni Westerman, Åsa Bretz, Åsa Gustafsson, Märet Wik-Bretz

589 kr

Väninnorna på Nordiska Kompaniet

Nyhet

Del 2

Väninnorna på Nordiska Kompaniet

Ruth Kvarnström-Jones

79 kr125 kr

Den yttersta hemligheten

Nyhet

Del 6

Den yttersta hemligheten

329 kr

Gråterskan

Nyhet

Del 12

Gråterskan

Camilla Läckberg

289 kr319 kr

Klenoden

Nyhet

Klenoden

Klas Östergren

329 kr

Tillhör följande kategorier

Materietillstånd inom Naturvetenskap och teknik

A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds.- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III–V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.