Compact Transistor Modelling for Circuit Design

Häftad, Engelska, 2012

AvHenk C. de Graaff,Francois M. Klaassen,Henk C. De Graaff

1 189 kr

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Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs.

Produktinformation

Utgivningsdatum2012-02-12
Mått170 x 244 x 20 mm
Vikt654 g
FormatHäftad
SpråkEngelska
SerieComputational Microelectronics
Antal sidor351
FörlagSpringer Verlag GmbH
ISBN9783709190456

Tillhör följande kategorier

1 Introduction.- 1.1 Compact Models.- 1.2 Compact Models and Simulation Programs.- 1.3 Subjects Treated in This Book.- References.- 2 Some Basic Semiconductor Physics.- 2.1 Quantum-Mechanical Concepts.- 2.2 Distribution Function and Carrier Concentration.- 2.3 The Boltzmann Transport Equation.- 2.4 Bandgap Narrowing.- 2.5 Mobility and Resistivity in Silicon.- 2.6 Recombination.- 2.7 Avalanche Multplication.- 2.8 Noise Sources.- References.- 3 Modelling of Bipolar Device Phenomena.- 3.1 Injection and Transport Models.- 3.2 The Quasi-Static Approximation and the Charge Control Principle.- 3.3 Collector Currents and Stored Charges.- 3.4 Base Currents.- 3.5 Depletion Charges and Capacitances.- 3.6 Early Effect.- 3.7 Quasi-Saturation, Base Widening and Kirk Effect.- 3.8 Avalanche Multiplication.- 3.9 Series Resistances.- 3.10 Time- and Frequency-Dependent Behaviour.- 3.11 Transit Time and Cut-Off Frequency fT.- 3.12 Noise Behaviour.- 3.13 Temperature Dependences.- References.- 4 Compact Models for Vertical Bipolar Transistors.- 4.1 Ebers-Moll-Type Models.- 4.2 Gummel-Poon-Type Models.- 4.3 The MEXTRAM Model.- 4.4 Short Review.- References.- 5 Lateral pnp Transistor Models.- 5.1 Model Definitions.- 5.2 Results.- 5.3 Shortcomings of Existing Models.- References.- 6 MOSFET Physics Relevant to Device Modelling.- 6.1 Formation of the Inversion Layer.- 6.2 The Ideal MOS Transistor Current.- 6.3 The Threshold Voltage.- 6.4 Carrier Mobility in Inversion Layers.- 6.5 Saturation Mode.- 6.6 Dynamic Operation.- 6.7 Intrinsic Parasitics.- References.- 7 Models for the Enhancement-Type MOSFET.- 7.1 Long-Channel Models.- 7.2 Small Transistor Models.- 7.3 Models for Analog Applications.- References.- 8 Models for the Depletion-Type MOSFET.- 8.1 Long-Channel Model.- 8.2 Short-Channel Model.-8.3 Charges and Charge Distribution.- References.- 9 Models for the JFET and the MESFET.- 9.1 The Drain Current of the Junction-Gate FET.- 9.2 The Drain Current of the MESFET.- 9.3 Charges and Capacitances.- References.- 10 Parameter Determination.- 10.1 General Optimization Method.- 10.2 Specific Bipolar Measurements.- 10.3 Example of Parameter Extraction for a Bipolar Transistor Model.- 10.4 Parameter Determination for MOSFETs.- 10.5 Specific MOSFET Measurements.- References.- 11 Process and Geometry Dependence, Optimization and Statistics of Parameters.- 11.1 Unity Parameters and Geometrical Scaling in Bipolar Modelling.- 11.2 Bipolar Process Blocks and Circuit Optimization.- 11.3 Geometry- and Process Dependence of MOSFET Parameters.- 11.4 Statistics: Definitions and Formulas.- 11.5 Bipolar Statistical Modelling.- 11.6 MOS Statistical Modelling.- References.