Samar K. Saha holds a Ph.D from Gauhati University, and an M.S.EM from Stanford University. He is currently adjunct professor at Santa Clara University, technical advisor at Ultrasolar Technology, distinguished lecturer and 2016–2017 president of the IEEE Electron Devices Society, and fellow of the Institution of Engineering and Technology. He previously worked for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta, and served as a faculty member at Southern Illinois University at Carbondale, Auburn University, University of Nevada at Las Vegas, and the University of Colorado at Colorado Springs.

• Introduction to Compact Models. Review of Basic Device Physics. Metal-Oxide-Semiconductor System. Large Geometry MOSFET Compact Models. Compact Models for Small Geometry MOSFETs. MOSFET Capacitance Models. Compact MOSFET Models for RF Applications. Modeling Process Variability in Scaled MOSFETs. Compact Models for Ultrathin Body FETs. Beyond-CMOS Transistor Models: Tunnel FETs. Bipolar Junction Transistor Compact Models. Compact Model Library for Circuit Simulation.

"A comprehensive book deeply rooted into the physics foundation of the devices being modeled… It convinces the reader, providing confidence in the inherently quite complex equations involved in compact modeling. Moreover, the inclusion of a chapter on process variability in miniaturized devices gives the entire book a deep sense of realism."—Constantin Bulucea, IEEE Journal of Electron Devices Society (J-EDS)"A comprehensive compendium on generic MOSFET compact modeling for both students and practitioners in electronic circuit design. … This text book provides a valueable insight of generic MOSFET compact modeling and is, thus, well suited for students in electronics engineering."—Prof. Dr. Joachim Burghartz, Institute for Microelectronics Stuttgart (IMS CHIPS)"This is an excellent book written in lucid language and covers almost all the topics related to modeling of MOS system both electrostatics and transport. It is useful for both beginners and experts in the field of compact modeling. Chapter 8 on statistical variability and chapter 12 on library will be definitely useful as these chapters are not covered in other books."—Yogesh Singh Chauhan, Indian Institute of Technology (IIT) Kanpur"The writing style of the author is very visual and transforms the material from sequential mathematical derivations into a usable mental image through precise descriptions of the device physics and model limitations."—Bill Nehrer, PDF Solutions"…is extremely timely and something the community has been waiting for. This book is well written, with an in depth explanation of basic concepts as well as advanced topics. This would serve not only as an introductory text book on modeling for students but also as a good refresher book for experts working in the field. Personally, this is the book I have been waiting for, and would order one right away."—V.Ramgopal Rao, P.K.Kelkar Chair Professor, IIT Bombay, India