Advances in Semiconductor Technologies

An Chen, PhD, is with IBM Research - Almaden, CA, USA. He received his PhD in Electrical Engineering from Yale University in 2004. Prior to IBM, An worked at Spansion, AMD, and GLOBALFOUNDRIES, on emerging memory technologies and Beyond-CMOS research. He was the Chair of the Emerging Research Device (ERD) group of the International Technology Roadmap for Semiconductors (ITRS) and is currently the chair of the Beyond CMOS (BC) group of the International Roadmap of Devices and Systems (IRDS). An is a Senior Member of IEEE.

• Preface xiList of Contributors xv1 Heterogeneous Integration at Scale 1Subramanian S. Iyer and Boris Vaisband1.1 Introduction 11.2 Technology Aspects of Heterogeneous Integration 41.3 Design and Architecture of Heterogeneous Integration Platforms 91.4 Reliability of Heterogeneous Integration Systems 141.5 Application Space of Heterogeneous Integration 171.6 Future of Heterogeneous Integration 181.7 Summary 202 Hyperdimensional Computing: An Algebra for Computing with Vectors 25Pentti Kanerva2.1 Introduction 252.2 Overview: Three Examples 262.3 Operations on Vectors 282.4 Data Structures 302.5 Vector Sums Encode Probabilities 322.6 Decoding a Product 332.7 High-Dimensional Vectors at Large 342.8 Memory for High-Dimensional Vectors 352.9 Outline of Systems for Autonomous Learning 362.10 Energy-Efficiency 372.11 Discussion and Future Directions 373 CAD for Analog/Mixed-Signal Integrated Circuits 43Ahmet F. Budak, David Z. Pan, Hao Chen, Keren Zhu, Mingjie Liu, Mohamed B. Alawieh, Shuhan Zhang, Wei Shi, and Xiyuan Tang3.1 Introduction 433.2 Front-End CAD 453.3 Layout Automation 483.4 Post-Layout Extraction and Verification 523.5 Conclusion 534 Magnetoelectric Transistor Devices and Circuits with Steering Logic 61Andrew Marshall and Peter A. Dowben4.1 Introduction 614.2 Simple Logic Functions with the MEFET "Steering Logic" 624.3 Logic Functions – Majority Gate 644.4 The Full Adder and the Dual XOR (Sum) Gates 674.5 Latch and Memory 704.6 The JK Master–Slave Flip-Flop 724.7 Conclusion 755 Nonvolatile Memory Based Architectures Using Magnetoelectric FETs 79Shaahin Angizi, Deliang Fan, Andrew Marshall, and Peter A. Dowben5.1 Introduction 795.2 Magnetoelectric Field Effect Transistor (MEFET) 795.3 1T-1M Memory Design Based on the MEFET 815.4 2T-1M Memory Design Based on the MEFET 845.5 MEFET Steering Memory 875.6 Evaluation 905.7 Conclusion 916 Organic Electronics 93Hagen Klauk6.1 Introduction 936.2 Organic Light-Emitting Diodes 946.3 Organic Solar Cells 966.4 Organic Thin-Film Transistors 976.5 Outlook 1017 Active-Matrix Electroluminescent Displays 109Xiaojun Guo, Li'ang Deng, and Arokia Nathan7.1 Introduction 1097.2 Light-Emitting Diodes for Displays 1107.3 TFT Backplanes 1157.4 Driving Schemes and Pixel Circuits 1167.5 Conclusion 1248 Organic and Macromolecular Memory – Nanocomposite Bistable Memory Devices 133Shashi Paul8.1 Introduction 1338.2 Organic Memory and Its Evolution 1378.3 Summary 1469 Next Generation of High-Performance Printed Flexible Electronics 153Abhishek S. Dahiya, Yogeenth Kumaresan, and Ravinder Dahiya9.1 Introduction 1539.2 Printing Technologies 1559.3 High-Performance Printed Devices and Circuits Using Nano-to-Chip Scale Structures 1589.4 Challenges and Future Directions 1689.5 Summary 17110 Hybrid Systems-in-Foil 183Mourad Elsobky10.1 Introduction 18310.2 Emerging Applications 18510.3 Integration Technologies 19110.4 State-of-the-Art Components 19610.5 HySiF Testing 20210.6 Conclusion and Future Directions 20411 Optical Detectors 211Lis Nanver and Tihomir Kneževi´c11.1 Introduction 21111.2 Si Photodiodes Designed in CMOS 21311.3 Ultraviolet Photodetectors 21711.4 Infrared Optical Detectors 21911.5 Emerging Devices 22511.6 Concluding Remarks 22612 Environmental Sensing 231Tarek Zaki12.1 Motivation 23112.2 Particulate Matter (PM) Sensing 23813 Insulated Gate Bipolar Transistors (IGBTs) 255homas Laska13.1 Introduction 25513.2 State-of-the-Art IGBT Technology 25713.3 Future Prospect of IGBT 26113.4 Outlook 26814 III–V and Wide Bandgap 273Mohammed Alomari14.1 Introduction 27314.2 Diamond Power Devices 27614.3 SiC Power Devices 27714.4 GaN Power Devices 27914.5 Wide Bandgaps for High-Temperature Applications 28514.6 Conclusion 28615 SiC MOSFETs 295Peter Friedrichs15.1 Introduction to Silicon Carbide for Power Semiconductors 29515.2 SiC Schottky Barrier Diodes 29515.3 SiC Transistors 29815.4 SiC Power MOSFETs 29915.5 SiC MOSFETs in Power Applications – Selected Aspects and Prospects 31616 Multiphase VRM and Power Stage Evolution 321Danny Clavette16.1 Evolution of the First Multiphase Controllers 32116.2 Transition from VRMs to "Down" Solutions 32416.3 Intel Xeon Generations Challenges Moore's Law 32616.4 Increased System Digitization Enables Digital Control 32716.5 DrMOS 1.0: Driver + MOSFETs 32816.6 DrMOS 4.0 and International Rectifier's Power Stage Alternative 33016.7 International Rectifier's "Smart" Power Stage 33416.8 DrMOS 5 × 5 mm and 4 × 4 mm De-standardization 33516.9 5 × 6 mm Smart Power Stage: Industry Driven Standardization 33616.10 Latest SPS Activities 33716.11 Trending Back to VRMs 33816.12 Summary 339References 340Abbreviations 341Index 343