L. Chen, Y.-X.Zheng, H. Zhao, Fudan University, Shanghai; N. Dai, SITP, CAS Shanghai; X. Jiang, SIM, CAS Shanghai; K. Jin, IoP, CAS Beijing; H.Liu, Nanjing University.

• 1 Infrared optical properties and applications of narrow band gap semiconductors 1.1 General remarks for narrow band gap semiconductors1.2 Several typical narrow band gap semiconductors and their properties1.3 Opto-electronic processes in narrow band gap semiconductors1.4 Infrared opto-electronic devices and applications1.5 Current research and application2 The group velocity picture and the new properties of modern optical/photonic materials2.1 Introduction of the group velocity in understanding the modern optical/photonic materials2.2 The temporal coherence change and the group velocity picture of superlenses2.3 The limit of invisibility and the dynamical study of cloak2.4 To stop and compress light at the interface of hyperbolic material2.5 The frequency-sensitive self-collimation with low group velocity2.6 Conclusion3 Light propagation at metal-based interfaces3.1 Introduction3.2 Transmission and refraction of the light wave in the metal 3.3 Measurement of the path of the light wave propagated at the metal interface3.4 Mechanisms with application of the plasmonic light wave 3.5 Conclusion4 Ultrafast laser induced spin dynamics in magnetoelectronic materials4.1 Introduction4.2 Time-resolved magneto-optical techniques4.3 Spin dynamics under ultrafast laser interaction4.4 Conclusions and outlook5 Photoelectric physics in oxide heterostructures5.1 Introduction5.2 Transverse photoelectric effect5.3 Lateral photoelectric effect5.4 Summary and outlook6 Optical magnetic resonance and strong coupling effects in metamaterials6.1 Introduction6.2 Magnetic resonance molecules 6.3 One-dimensional magnetic resonators6.4 Two-dimensional magnetic plasmon crystals6.5 Outlook