Advanced Ultra Low-Power Semiconductor Devices

Shubham Tayal, PhD, is an assistant professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India. He has more than six years of academic and research experience and has published more than 30 research papers in various scholarly journals and conferences. He is on the editorial and reviewer panel of many journals and conferences, as well. He is the editor or coeditor of seven books and was a recipient of the Green ThinkerZ International Distinguished Young Researcher Award in 2020. Abhishek Kumar Upadhyay, PhD, is a research and development engineer at X-FAB GmbH Dresden, Germany. After obtaining his PhD in electrical engineering from the Indian Institute of Technology in 2019, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and has worked in the industry since. He has authored several research articles. Shiromani Balmukund Rahi, PhD, is a faculty member at the Mahamaya College of Agriculture Engineering and Technology, Akabarpur, Uttar Pradesh, India and an associated senior research scholar of Department of Electrical Engineering(Semiconductor Device, modeling division), Indian Institute of Technology Kanpur. He has more than six years of academic and research experience and has published 25 journal articles, two proceedings, and 18 book chapters, and he has edited seven books for international publications. Young Suh Song is an assistant professor in the Department of Computer Science at the Korea Military Academy. He has authored or co-authored over 40 research papers in journals and conferences, and he has served as a technical committee member and guest speaker at various universities and conferences.

• Preface xi1 Subthreshold Transistors: Concept and Technology 1Ball Mukund Mani Tripathi1.1 Introduction 21.2 Major Sources of Leakage and Possible Methods of Prevention 21.3 Possibilities and Challenges 121.4 Conclusions 212 Introduction to Conventional MOSFET and Advanced Transistor TFET 29M. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith2.1 Introduction 302.2 Device Structure 302.3 TFET Principle of Operation 312.4 Material Characterization 332.5 Characteristics of TFET 352.6 Comparison of OFF-State Characteristics 372.7 Phonon Scattering's Impact 392.8 ON-State Performance Comparison 402.9 Performance Analysis Based on Intrinsic Delay 402.10 Bandgap's Effect on Device Performance 412.11 MOSFET and TFET Scaling Behaviour 432.12 Surface Potential of an N-TFET and N-MOSFET 452.13 Professional Advantages of TFET over MOSFET 462.14 Conclusion 463 Operation Principle and Fabrication of TFET 51Mekonnen Getnet Yirak and Rishu Chaujar3.1 Introduction 523.2 Planar MOSFET's Limitations 543.3 Demand for Low Power Operation 553.4 TFET: Operation Principle of TFET 563.5 TFET: Recent Design Issues in TFET 633.6 TFET: Modeling and Application 653.7 TFET: Fabrication Perspective 683.8 TFET: Applications and Future of Low-Power Electronics 703.9 Expected Challenges in Replacing MOSFET with TFET 703.10 Conclusion 714 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET 77Nayana G H and P. Vimala4.1 Introduction 784.2 Modeling Approaches 784.3 Structure 814.4 Applications of Tunnel Field-Effect Transistor 834.5 Road Ahead for Tunnel Field Effect Transistors 875 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET 91Prabhat Singh and Dharmendra Singh Yadav5.1 Introduction 925.2 Simulated Device Structure and Parameters 935.3 DC Characteristics 935.4 Analysis of Analog/RF FOMs 985.5 Conclusion 1016 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure 105Susmitha Kothapalli, Zohmingliana and Brinda Bhowmick6.1 Introduction 1066.2 Study of Different TFET Structures 1066.3 Proposed Structure 1096.4 Results and Discussion 1106.5 Conclusion 1276.6 Future Scope 1287 State of the Art Tunnel FETs for Low Power Memory Applications 131Arun A. V., Sreelekshmi P. S. and Jobymol Jacob7.1 Static Random Access Memory 1317.2 Performance Parameters of SRAM Cell 1347.3 TFET-Based SRAM Cell Design 1357.4 Conclusion 1598 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight 165Abhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.8.1 Fundamental Limitation of CMOS: Tunnel FETs 1658.2 Working Principle of Tunnel FET 1688.3 Point and Line TFETs: Tunneling Direction 1698.4 Perspective of Line TFETs 1708.5 Analytical Models of Line TFETs 1768.6 Line TFETs for Analog & Digital Circuits Design 1788.7 Other Steep Slope Devices 1798.8 Conclusion 1819 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors 187Sresta Valasa, Shubham Tayal and Laxman Raju Thoutam9.1 Introduction 1889.2 Device Simulation Details 1909.3 Results and Discussion 1929.4 Conclusion 20110 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application 207Shelja Kaushal10.1 Introduction 20810.2 NCFET and Its Design Constraints 20910.3 NCFET for Low-Power Applications 21610.4 Summary 22611 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses 235Sourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kämpfe11.1 Introduction 23611.2 Ferroelectricity in Hafnium Oxide 241x Contents11.3 IGZO Based Ferroelectric Thin Film Transistor 24511.4 Applications in Neural Networks 24911.5 Conclusion 25012 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges 261Y. Alekhya, Umakanta Nanda and Chandan Kumar Pandey12.1 Introduction 26112.2 Literature Survey 26312.3 Impact of Radiation Effects on Sram Cells 26612.4 Results and Discussion 26712.5 Conclusion 27413 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors 279Young Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena13.1 Introduction 28013.2 Challenges in Future Ultra-Low Power Semiconductors 28213.3 Conclusion 286References 288Index 293