Handbook of Advanced Semiconductor Field Effect Transistors

Ekta Goel, PhD is an assistant professor at the National Institute of Technology Warangal. She has published one book chapter and over 50 research articles in peer-reviewed journals and conferences. Her areas of research include modeling and simulation of advanced nanoscale MOS devices, VLSI circuit simulation, photodiodes, and photovoltaic cells. Archana Pandey, PhD is a senior assistant professor in the Department of Electronics and Communication Engineering at the Jaypee Institute of Information Technology. She has published numerous articles in peer-reviewed international journals and conferences. Her research areas include novel semiconductor devices, FinFETs, device modeling, delay modeling of digital circuit modules, VLSI device-circuit co-design, nanosheet FETs, and FET biosensors. Shiromani Balmukund Rahi, PhD is an assistant professor at the Mahamaya College of Agriculture, Engineering, and Technology. He has published 25 research papers, two conference proceedings, and 20 book chapters in addition to editing seven books. His work focuses on the development of IoTs for smart applications ultra-low power devices such as tunnel FETs, negative capacitance FETs, and nanosheets. Arun Samuel, PhD is a professor at the National Engineering College in Kovilpatti, India. He has over 90 publications to his credit and is a lifetime member of the Institute of Engineering and the Institute of Electrical and Electronics Engineers. His research interests include modelling and simulation of multi-gate transistors and tunnel field-effect transistors.

• Preface xix1 Semiconductor Reliability Analysis and Modeling 1Reinhard S. Park1.1 Introduction 21.2 History and Fundamental of Semiconductors 21.3 Brief Overview of Semiconductor Fabrication 31.4 Definition and Explanation of Bathtub Curve 51.5 Failure Mechanisms in Semiconductor 91.6 Failure Mechanism Modeling and Prediction 9.7 Design for Reliability Strategies for Semiconductor 111.8 Conclusion 142 Unveiling the Potential of FinFETs: An Alternative Paradigm to MOSFET 19Nitish Vashishth, Neha Goel and R. K. Yadav2.1 Introduction to Transistor Technology 202.2 Implementation of Inverters and NAND Gates Using FinFETs 252.3 Implementation of Latches and Flip-Flops Using FinFETs 322.4 Implementation of SRAM Using FinFETs 332.5 Implementation of DRAM Using FinFETs 352.6 Challenges and Limitations of FinFET Technology 352.7 Potential Future Developments in FinFET Technology 372.8 Conclusion 393 Prospects of Negative-Capacitance Ferroelectric Field-Effect Transistors in Low-Power Electronics and Beyond 43Ningombam Ajit Kumar, Khuraijam Nelson Singh, Sisira Hawaibam, Sushmita Dandeliya and Sonal Agrawal3.1 Introduction 443.2 The Fundamentals of Negative Capacitance Ferroelectric FET 493.3 Modeling 573.4 Applications 593.5 Performance Optimization and Challenges 613.6 Comparative Analysis with Other Transistor Technologies 633.7 Future Prospects and Trends 643.8 Summary 664 Unleashing the Potential of Negative Capacitance Field Effect Transistors: A Paradigm Shift in Low-Power Electronics 73Malvika, Jagritee Talukdar, Bijit Choudhuri and Kavicharan Mummaneni4.1 Introduction 744.2 A Brief Survey 794.3 Simulation Strategy of NCFET and its Application in Circuit 814.4 Analysis of Device Performance and its Application as an Inverter 834.5 Conclusion 845 The Future of Low Power Electronics: Tunnel Field-Effect Transistors 89Sourav Das, Ekta Goel and Kunal Singh5.1 Introduction 905.2 Fundamental Principles of TFET Operation 905.3 Applications of TFETs 965.4 Literature Review 985.5 Simulation of Dual Metal Double Gate Hetero Pocket V-TFET 995.6 Conclusion 1016 Novel Gate All Around FET with Enhanced Performance and Improved Process Sensitivity 107Mandeep Singh Narula, Archana Pandey and Ajay Kumar6.1 Introduction 1086.2 Proposed Structure 1106.3 Device Performance 1136.4 Process Sensitivity 1156.5 Conclusion 1177 Rise of Tunnel FETs as a Revolutionary MOSFET Alternative 119G. Munirathnam and Y. Murali Mohan Babu7.1 Introduction to Tunnel FETs 1207.2 Working Principles of Tunnel FETs 1277.3 TFET Device Structure and Fabrication 1357.4 TFET Performance Metrics 1437.5 Applications of TFETs 1497.6 Challenges and Future Directions 1527.7 Case Studies and Practical Implementations 1577.8 Conclusion 1658 Tunnel Field Effect Transistors: Harnessing Light Sensitivity for Optical Sensing 169Jagritee Talukdar, Malvika, Basab Das and Kavicharan Mummaneni8.1 Introduction 1708.2 A Brief Overview 1728.3 Photo Sensing in TFETs: Principle of Operation and Geometry 1738.4 Simulation Strategy for TFET-Based Photosensor 1758.5 Sensitivity Parameters of Photosensor 1758.6 An Extended Source TFET-Based Photosensor 1778.7 Conclusion 1809 2D Material Based FET Sensors 183Archana Pandey, Jyoti Pant, Medha Joshi, Nitanshu Chauhan and Mandeep Singh9.1 Introduction 1839.2 Properties and Applications of 2D Materials 1859.3 Sensing Mechanisms 1889.4 Challenges and Future Directions 1919.5 Conclusion 19510 2D Material-Based FETs for Next Generation Integrated Circuits 199Aruru Sai Kumar, V. Bharath Sreenivasulu, K. Sarangam, P. Ravi Sankar and K. Nishanth Rao10.1 Introduction 20010.2 Literature Survey 20310.3 Proposed Methodology 20510.4 Result Analysis 20610.5 Conclusion 21311 MOSHEMT—Device Background, Materials, and Structures for Different Applications 217Ananya Dastidar, Tapas Kumar Patra and Sushanta Kumar Mohapatra11.1 Classical MOSFETs and their Issues 21811.2 HEMT and Its Challenges 21911.3 MOSHEMT 22011.4 MOSHEMT Structural Engineering 22811.5 MOSHEMT for Biosensing Applications 23411.6 Summary 24112 Quantum Computing and Digital Twins with Development of Semiconductor Field Effect Transistors 255Shiromani Balmukund Rahi and Young Suh Song12.1 Introduction to Quantum Computing: Concept, History, and Principles 25612.2 Understanding Digital Twins 25812.3 Semiconductor Development: Past, Present, and Future 26412.4 Integration of Quantum Computing and Digital Twins 26612.5 Applications and Impact Across Industries 26812.6 Ethical and Societal Implications 27012.7 Future Directions 27112.8 Conclusion 27213 Low Voltage Circuit Design with FinFETs 277Sarita Yadav and Nitanshu Chauhan13.1 Introduction 27813.2 Advent of FinFETs 27913.3 Critical Device-Circuit Co-Design Challenges in Low-Voltage Domain for FinFETs 28213.4 Inverter Capacitances in Low-Voltage Region of Operation 28713.5 Minimum Supply Voltage for FinFET Logic Gates 29413.6 Conclusion 29914 A Novel Low-Power Approach of 8-Bit Vedic Multiplier Using Reversible Logic Gates 305Aruru Sai Kumar, K. Sarangam, P. Ravi Sankar, K. Nishanth Rao and Yashika Gaidhani14.1 Introduction 30614.2 Literature Survey 30914.3 Proposed Methodology 31014.4 Result Analysis 31714.5 Conclusion 32015 64-Bit High Speed Parallel Prefix Adder Architectures 323B. Harish and M.S.S. Rukmini15.1 Introduction 32315.2 Implementation of PPA in 64-Bit 32716 Design and Implementation of High-Performance Adaptive Baud Rate Generator for IoT Applications 337B. Harish, N. Jahnavi, M. Brammani, Md. Karishma and N. J. L. S. Manasa16.1 Introduction 33816.2 Fundamentals of Baud Rate Generation 34016.3 Requirements and Challenges in IoT Baud Rate Generation 34516.4 State-of-the-Art Techniques in Baud Rate Generation 34916.5 High-Performance Adaptive Baud Rate Generators 35116.6 Results and Discussion 35416.7 Future Directions and Challenges 35916.8 Conclusion 36017 Biomedical Applications in VLSI Field 365Jyoti Kandpal, Divya Sharma and Ekta Goel17.1 Introduction 36517.2 Role of VLSI in Biomedical Application 36717.3 Application 36917.4 Conclusion 38018 Self-Powered Biosensor Field-Effect Transistors 383Archana Pandey and Shradha Saxena18.1 Introduction to Biosensors 38318.2 Field-Effect Transistor (FET)-Based Biosensors 38618.3 Label-Free Detection with FET Biosensors 39218.4 Need for Self-Powering Mechanisms in Biosensors 39318.5 Energy Harvesting in Biosensor FET Technology 39418.6 Applications of Self-Powered Biosensor FETs 39518.7 Conclusion 39519 Vertical Tunneling FETs (V-TFETs): A Novel Approach in Biosensing Technology 401Sourav Das, Ekta Goel and Kunal Singh19.1 Introduction 40119.2 Types of Biosensors 40319.3 Comparison of FET- and TFET-Based Biosensors 40419.4 Dielectric Modulation in TFETs: Principle and Design 40519.5 Literature Review 40819.6 Simulation Methodology for a DM TFET as a Label-Free Biosensor 40819.7 Sensitivity Parameters 40919.8 Non-Idealities in Dielectric-Modulated Biosensors 41019.9 Impact of Charged Biomolecules on Sensitivity 41119.10 Device Architecture and Simulation of Model 41219.11 Conclusion 41420 Micro-Electromechanical System (MEMS) and Field-Effect Transistor (FET)–Coupled Sensors 419Shradha Saxena and Archana Pandey20.1 Introduction to Micro-Electromechanical System (MEMS)–Based Sensor 42020.2 Introduction to Field-Effect Transistor (FET)–Based Sensors 42220.3 Introduction of MEMS-FET Sensor 42620.4 Applications of MEMS-FET Sensors 42720.5 Self-Powered MEMS-FET Sensors 43320.6 Future Direction and Challenges 43520.7 Conclusion 43621 Memory Design Using Conventional DRAM Unit Cell 439Husien Salama, Zina Guesmi, Faouzi Nasri, Billel Smaani, Khalifa Ahmed Salama and Ahmed Gawa21.1 Introduction 44021.2 Conventional DRAM Unit Cell Structure 44321.3 Design Considerations for Conventional DRAM 45021.4 Challenges and Limitations of Conventional DRAM 45521.5 Conclusion and Future Directions 45722 Ensuring Robustness: Reliability Analysis of 4H-SiC Trench MOSFETs in High-Performance Analog Applications 465Ajay Kumar, Mandeep Singh Narula, Neha Gupta, Aditya Jain, Kaushal Kumar and Amit Kumar Goyal22.1 Introduction 46622.2 Device Design and Its Parameters 46822.3 Methodology 46922.4 Results and Discussion 46922.5 Conclusion 475References 476About the Editors 479Index 481