Field Effect Transistors

P. Suveetha Dhanaselvam, PhD, is a professor in the Department of Electronics and Communication at Velammal College of Engineering and Technology, Madurai, India, with over 21 years of teaching experience. She has published papers in over 28 reputed journals and 65 international conferences, as well as two books, numerous book chapters, and a patent. Additionally, she serves as a reviewer for several journals and works on funded projects. She has produced two Doctorates and five are pursuing their PhD under her guidance. Srinivasa Rao Karumuri, PhD, is a professor and the head of the VLSI-MEMS Research Center, Department of Electronics and Communication Engineering at the Koneru Lakshmaiah Education Foundation(Deemed to be University), Guntur, Andhra Pradesh, India. He also acts as a reviewer for several IEEE Transactions Journals and universities’ graduate and post-graduate programs and is working on a project for the Indian government’s Science and Engineering Board. Additionally, he has published over 250 international research publications and presented over 65 international conference papers and guided more than 10 PhD Scholars in the field of VLSI and Microelectronics domain. Shiromani Balmukund Rahi, PhD, is an assistant professor at University School of Information and Communication Technology (SoICT) Gautam Buddha University Greater Noida, Uttar Pradesh, India. He has successfully published 25 international research publications, four conference proceedings and 35 book chapters, in addition to presenting his research at various international conferences and workshops. In addition to his original work, he has edited 10 books and received awards for his work as an editor and reviewer for several international journals. He has also worked as post-doctoral researcher in Korea Military Academy Seoul, Republic of Korea. Dharmendra Singh Yadav, PhD, is an assistant professor in the Department of Electronics and Communication Engineering at the National Institute of Technology, Kurukshetra, Haryana, India. He has published over 60 publications internationally in addition to several reputable books and book chapters. His current research interests include very large scale integration design, device modeling, and AI and machine learning in semiconductor devices and circuit-based applications in research.

• Preface xix1 Classical MOSFET Evolution: Foundations and Advantages 1S. Amir Ghoreishi and Samira Pahlavani1.1 Introduction of Classical MOSFET 11.2 Dual-Gate MOSFET 31.3 Gate-All-Around MOSFET 71.4 ID -VG and ID -VG Characteristics of Conventional MOSFETs 81.5 Capacitance Characteristics of Conventional MOSFETs 121.6 Frequency-Dependent Behavior 151.7 Conclusion 18References 192 Marvels of Modern Semiconductor Field-Effect Transistors 23S. Amir Ghoreishi, Mohsen Mahmoudysepehr and Zeinab Ramezani2.1 Introduction 232.2 Tunnel Field-Effect Transistor 252.3 Junctionless Transistors 272.4 GAA-FETs the Origin of Nanowire FETs and Nanosheet FETs 312.5 Significance in Modern Electronics 322.6 Main Electrical Characteristics of GAA-FETs 332.7 GAA-FET Classification 352.8 Nanowire Field-Effect Transistors (NW-FETs) 362.9 Nanosheet Field-Effect Transistors (NS-FETs) 372.10 Electrical Characteristics 382.11 Conclusion 40References 423 Introduction to Modern FET Technologies 45A. Babu Karuppiah and R. Rajaraja3.1 Introduction 453.2 FinFETs (Fin Field-Effect Transistors) 463.3 Unveiling Multi-Gate MOSFETs: A Symphony of Efficiency 473.4 Unveiling Nanoscale MOSFETs: The Miniaturization Marvel 493.5 High–Electron Mobility Transistors (HEMTs): A Leap into the Future of FET Technology 503.6 Graphene Field-Effect Transistors (GFETs): Pioneering the Future of FET Technology 513.7 Tunnel Field-Effect Transistors (TFETs): Navigating the Quantum Realm of Future Electronics 533.8 Silicon Carbide (SiC) MOSFETs: Transforming Power Electronics for a Greener Future 543.9 Power MOSFETs: Empowering the Future of High-Efficiency Power Electronics 553.10 Gallium Nitride (GaN) High–Electron Mobility Transistors (HEMTs): Unleashing the Power of Wide Bandgap Semiconductors 563.11 Organic Field-Effect Transistors (OFETs): Bridging the Gap to Flexible and Sustainable Electronics 583.12 Conclusion 59Bibliography 604 Scaling of Field-Effect Transistors 63L. Vinoth Kumar, G. Pradeep Kumar and B. Karthikeyan4.1 Introduction 634.2 Short-Channel Effect 654.3 FinFET Overview 674.4 GAAFET Overview 694.5 Conclusions 71References 715 Future Prospective Beyond CMOS Technology Design 73P. Suveetha Dhanaselvam, B. Karthikeyan and P. Anand5.1 Introduction 735.2 Spintronics 745.3 Carbon Nanotube Transistors 755.4 Memristor 775.4.1 Working Principle 775.5 Applications 785.6 Quantum Dots 78References 796 Nanowire Transistors 81P. Suveetha Dhanaselvam, B. Karthikeyan, S. Nagarajan and B. Padmanaban6.1 Introduction 816.2 Nanowire FETs 836.3 Organic Nanowire Transistors 896.4 Conclusion 90References 907 Advancement of Nanotechnology and NP-Based Biosensors 93P. Anand and B. Muneeswari7.1 Introduction 937.2 Metal Oxide–Based Biosensors 957.3 Zinc Oxide–Based Biosensor 967.4 AuNP-Based Biosensors 987.5 GR-Based Biosensors 101References 1028 Technology Behind Junctionless Semiconductor Devices 105Pavani Kollamudi and Srinivasa Rao Karumuri8.1 Introduction 1068.2 Operating Modes Based on the Structure of the Device 1128.3 TCAD Simulations 1168.4 Effect of Temperature 1198.5 Results and Discussions 1208.6 Conclusion 123References 1239 Breaking Barriers: Junctionless Metal-Oxide-Semiconductor Transistors Reinventing Semiconductor Technology 125G. Vijayakumari, U. Rajasekaran, R. Praveenkumar, S. D. Vijayakumar and V. Kumar9.1 Introduction 1259.2 Junctionless MOS Transistors: Principles and Concepts 1309.3 Fabrication Techniques for Junctionless Transistors 1349.4 Real-World Implementations of Junctionless Transistors 1399.5 Conclusion 1439.6 Applications 143References 14310 Performance Estimation of Junctionless Tunnel Field-Effect Transistor (JL-TFET): Device Structure and Simulation Through TCAD 145Pradeep Kumar Kumawat, Shilpi Birla and Neha Singh10.1 Introduction 14510.2 Junctionless TFETs 14810.3 Design Structure of Junctionless TFETs 15010.4 Conclusion 154References 15411 Science and Technology of Tunnel Field-Effect Transistors 157Zuber Rasool, Nuzhat Yousf, Aadil Anam and S. Intekhab Amin11.1 Phenomenon of Quantum Tunneling 15711.2 Tunneling Mathematics 15811.3 Tunnel Field-Effect Transistors (TFETs) 16511.4 Conclusion 183References 18312 Circuits Designed for Energy-Harvesting Applications That Leverage TFETs to Achieve Extremely Low Power Consumption 189Basudha Dewan12.1 Introduction 18912.2 Energy Harvesting in an Era Beyond Moore’s Law 19312.3 Tunnel Field-Effect Transistors (TFETs) as a Vital Technology for Energy Harvesting 19412.4 Tunnel FET Technology: State of the Art 19612.5 Band-to-Band Tunneling (BTBT) Current 19612.6 MOSFET vs. TFET 19712.7 Innovations in the Configurations of TFETs 20012.8 Conclusion 202References 20213 A Ferroelectric Negative-Capacitance TFET with Extended Back Gate for Improvement in DC and Analog/HF Parameters 205Anil Kumar Pathakamuri, Chandan Kumar Pandey, Diganta Das, Umakanta Nanda and Shiromani Balmukund Rahi13.1 Introduction 20613.2 Architectural Configuration and Simulation Approach 20713.3 Results and Discussion 20813.4 Conclusion 217References 21714 Basic Concepts of Heterojunction Tunnel Field-Effect Transistors 221P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha and P. Kavitha14.1 Introduction 22114.2 Boosting TFET ON Current 22314.3 Heterojunction TFET 22514.4 Various Heterojunction Structures 22614.5 Conclusion 232References 23315 Boosting Performance of Charge Plasma–Based TFETs 235Iman Chahardah Cherik, Saeed Mohammadi and Hadiseh Hosseinimanesh15.1 Introduction 23515.2 What is Charge Plasma Concept? 23615.3 Techniques to Enhance the Performance of Dopingless TFETs 23815.4 Materials Engineering 23815.5 Enhancement of the Electrostatic Control 24315.6 Drawbacks of Dopingless TFET 24715.7 Benchmarking 25115.8 Summary 252Future Scope 252References 25316 TFET Device Modeling Using ML Algorithms 257P. Vanitha, Paulvanna Nayaki Marimuthu, N. B. Balamurugan and M. Hemalatha16.1 Introduction 25816.2 Role of ML Algorithms in Device Modeling 25916.3 Simulation of Devices and ML Techniques 26116.4 Dataset Generation 26216.5 ml Workflow 26316.6 Comparison of ML Algorithms 264References 26717 Design of Next-Generation Field-Effect Transistors Using Machine Learning 269K. Girija Sravani, M. Srikanth, Manikanta Sirigineedi and Padma Bellapukonda17.1 Introduction 26917.2 Description 27017.3 Optimizing FET Performance through Machine Learning 27117.4 Enhancing Predictive Accuracy and Robustness 27517.5 Integrating ML-Optimized FET Structures with Manufacturing Advances 27917.6 Conclusion 282Bibliography 28218 Machine Learning–Augmented Blockchain-Based Graphene Field-Effect Transistor Sensor Platform for Biomarker Detection 287Srinivasa Rao Karumuri, M. Srikanth, J.M.S.V. Ravi Kumar and Bhanurangarao M.18.1 Introduction 28718.2 Description 28818.3 Conclusion 306Bibliography 30619 Heterojunction Concept and Technology for FET Developments 311Shashank Kumar Dubey, Soumak Nandi, Kondaveeti Girija Sravani, Sandip Swarnakar, Mukesh Kumar and Aminul Islam19.1 Introduction 31119.2 Concept of Heterojunction 31319.3 Heterojunction Field-Effect Transistors (HFETs): An Advanced FET 31519.4 GaAs-Based HEMTs 31819.5 InP-Based HEMTs 31919.6 GaN-Based HEMTs and its Applications 320References 32720 Characteristic Analysis of GOS HTFET 333B. V. V. Satyanarayana, T. S. S. Phani, A. K. C. Varma, G. Prasanna Kumar, M. V. Ganeswara Rao and Prudhvi Raj Budumuru20.1 Introduction 33320.2 Design Considerations of GOS HTFET 33520.3 Device Physics and Structures of GOS HTFETs 33920.4 Model of GOS HTFET 34320.5 Simulation and Validation of GOS HTFET 34520.6 Characteristics of GOS HTFET 34620.7 Limitations of GOS HTFET 35120.8 Application of GOS HTFET in SRAM Design 35120.9 Conclusions 352References 35321 A Charge-Based 2D Mathematical Model for Dual-Material Gate Fe-Doped AlGaN/AlN/GaN High–Electron Mobility Transistors 355N. B. Balamurugan, M. Hemalatha, M. Suguna and D. Sriram Kumar21.1 Introduction 35621.2 Device Structure and Description 35621.3 Mathematical Formulation 35821.4 Summary 370References 37022 Exploring Vertical Transition Metal Dichalcogenide Heterostructure MOSFET: A Comprehensive Review 373Malu U., Charles Pravin J. and Sandeep V.22.1 Introduction 37322.2 Transition Metal Dichalogenides (TMDs) 37522.3 Heterostructure Transition Metal Dichalcogenides 37822.4 Some of the TMD-Related Materials 38122.5 Other Properties 38422.6 Conclusion 384References 38423 Two-Dimensional Materials and Devices for UV Detection 393Penchalaiah Palla, Akbar Basha Dhu-al Shaik, David Jenkins and Srinivasa Rao Karumuri23.1 Part 1: Introduction to 2D Materials and UV Detectors 39423.2 Part 2: Recent Developments in 2D Material–Based UV Detectors 40723.3 Summary 412References 41324 Negative-Capacitance Field-Effect Transistor for Optimization of Power Factor for Modern Applications 417Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Hanumant Lal and Srinivasa Rao Karumuri24.1 Introduction 41824.2 Requirement of Low-Power MOSFET 41824.3 Challenges in Classical MOS Devices 41924.4 Negative Capacitance: Low-Power Device 42124.5 Fundamental of Negative-Capacitance Technology 42224.6 Negative-Capacitance Transistors 42624.7 Fundamental Approach for Low-Power Circuit Design 42624.8 Future Scope 42724.9 Conclusion 428References 42825 Nanoscale High-K Tri-Material Surrounding-Gate MOSFET—An Insight Analysis 433P. Suveetha Dhanaselvam, S. Vasuki, B. Karthikeyan and D. Sriram Kumar25.1 Introduction 43325.2 Proposed Structure 43525.3 Analytical Model 43525.4 Conclusion 441References 44126 Nanoscale Field-Effect Transistors (FETs) in RF Applications 443Rajeswari P., Gobinath A., Suresh Kumar N. and Anandan M.26.1 Introduction 44426.2 Fundamental Principles and Operating Characteristics of FETs 44726.3 Scaling Challenges in Nanoscale FETs for RF Applications 45026.4 Exploring the Landscape: Field-Effect Transistors (FETs) in Radiofrequency (RF) Applications 45226.5 Conclusion 454References 45527 Emerging Subthreshold Swing FET for Next-Generation Technology Nodes 457G. Lakshmi Priya, T. Ranjith Kumar, G. Gifta, A. Andrew Roobert and M. Venkatesh27.1 Introduction 45827.2 Fundamental Challenges with Conventional FET Device 45827.3 Developed Emerging Subthreshold Swing FET and its Working Principle 46527.4 Limitations of Emerging Subthreshold Swing FET 47027.5 Techniques to Overcome the Limitations of Emerging Subthreshold Swing FET 47027.6 Conclusion 472References 47228 Elucidation of the Impact of Nano Heat Transfer Variability on Three-Dimensional Field-Effect Transistors 477Faouzi Nasri, Husien Salama, Billel Smaani and Khalifa Ahmed Salama28.1 Introduction 47828.2 Mathematical Formulation and Structural Analysis 48228.3 Results and Discussion 48528.4 Conclusion 490References 491About the Editors 493Index 495