Silicon Carbide, Volume 1

Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests.Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications.Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) "Silicon carbide as semiconductor material: novel aspects of crystal growth and doping". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nurnberg, Germany, and has authored over 300 scientific publications.

• 1) Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches6) EPR Identification of Intrinsic Defects in 4H-SiC7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC9) Characterization of defects in silicon carbide by Raman spectroscopy10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS18) Epitaxial Graphene: an new Material19) Density Functional Study of Graphene Overlayers on SiC

"At this stage, the two volumes provide an up-to-date, comprehensive, and critical assessment of all aspects of SiC semiconductor technology with an emphasis on power electronics . . . The contributions are written by internationally renowned experts from industry as well as academia who are actively involved in SiC R&D. Hence, the two volumes provide and evaluate source of information for everybody working with SiC or generally interested in the current and future state of power electronics". (Int. Journal of Microstructure and Materials Properties, 2011)