Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

Häftad, Engelska, 2020

AvHan,Su-Tin,Su-Ting Han,Ye Zhou,China) Han, Su-Ting (Institute of Microscale Optoelectronics, Shenzhen University,China) Zhou, Ye (Institute for Advanced Study, Shenzhen University

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Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies.

This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices.

Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more
Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures
Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies

Produktinformation

Utgivningsdatum2020-05-27
Mått152 x 229 x undefined mm
Vikt640 g
FormatHäftad
SpråkEngelska
SerieWoodhead Publishing Series in Electronic and Optical Materials
Antal sidor352
FörlagElsevier Science
ISBN9780128197172

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Su-Ting Han is an Associate Professor at the Institute of Microscale Optoelectronics, Shenzhen University, China. She received her MSc degree in Analytical Chemistry from Hong Kong Baptist University and her PhD degree in Physics and Materials Science from City University of Hong Kong. Her research interests include functional electronic devices and flexible, stretchable, and wearable electronics. Ye Zhou is an IAS Fellow in the Institute for Advanced Study, Shenzhen University. His research interests include flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, and nano-scale devices for technological applications, such as logic circuits, data storage, photonics and sensors.

1. Introduction to photo-electroactive non-volatile memory2. Characteristics and mechanisms in resistive switching memories3. Memory characteristics and mechanisms in transistor based memories4. Two-terminal optoelectronic memory device5. Three-terminal optoelectronic memory device6. Synaptic devices based on organic field-effect transistors7. Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications8. One-dimensional materials for photo-electroactive memories and synaptic devices9. Novel photo-electroactive memories and neuromorphic devices based on nanomaterials10. Organic and Hybrid Photo-Electroactive Polymer for Memories and Neuromorphic Computing11. Metal oxide materials for photo-electroactive memories and neuromorphic computing systems12. Perovskites for photo-tunable memories and neuromorphic computing13. Chalcogenide materials for optoelectronic memory and neurmorphic computing14. Device challenges, possible strategies and conclusions

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