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This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.

Produktinformation

  • Utgivningsdatum2020-06-30
  • Mått156 x 234 x undefined mm
  • Vikt453 g
  • FormatHäftad
  • SpråkEngelska
  • Antal sidor138
  • FörlagTaylor & Francis Ltd
  • ISBN9780367573553

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