Semiconductor Lasers

Alexei Baranov is Research Director of Research at CNRS, France. Eric Tournié is a professor of electrical engineering and photonics at the University of Montpellier, France, and a senior member of the Institut Universitaire de France. He is a specialist in compound semiconductor heterostructures and optoelectronic devices, with a focus on mid-infrared optoelectronics.

• Contributor contact detailsWoodhead Publishing Series in Electronic and Optical MaterialsPrefacePart I: Fundamentals of semiconductor lasersChapter 1: Principles of semiconductor lasersAbstract:1.1 Introduction1.2 The basic laser diode1.3 Key physical concepts1.4 Absorption and gain in low dimensional semiconductor structures1.5 Recombination processes1.6 Gain–current relations1.7 Temperature dependence of threshold current1.8 Rate equations1.9 Future trends1.10 AcknowledgementsChapter 2: Photonic crystal lasersAbstract:2.1 Introduction2.2 Lasing threshold of photonic crystal lasers (PhCLs)2.3 Photonic crystal nanobeam lasers2.4 Photonic crystal disk lasers2.5 Conclusion and future trends2.6 AcknowledgementsChapter 3: High-power semiconductor lasersAbstract:3.1 Introduction: theory and design concept3.2 Single emitters3.3 Array concept for power scaling3.4 Conclusion and future trendsChapter 4: Semiconductor laser beam combiningAbstract:4.1 Introduction to laser beam combining4.2 Experiments on external cavity broad-area laser diode arrays4.3 Modeling the dynamics of a single-mode semiconductor laser array in an external cavity4.4 Conclusion4.5 AcknowledgmentsChapter 5: Ultrafast pulse generation by semiconductor lasersAbstract:5.1 Introduction5.2 Gain-switching5.3 Important developments in gain-switched semiconductor lasers (SLs)5.4 Q-switching5.5 Mode-locking (ML) in semiconductor lasers: an overview5.6 The main predictions of mode-locked laser theory5.7 Important tendencies in optimising the ML laser performance5.8 Novel mode-locking principles5.9 Overview of applications of mode-locked diode lasers5.10 Conclusion5.11 AcknowledgementsPart II: Visible and near-infrared lasers and their applicationsChapter 6: Nonpolar and semipolar group III-nitride lasersAbstract:6.1 Introduction6.2 Applications of group III-nitride lasers6.3 Introduction to properties of III-nitrides6.4 Optical properties of nonpolar and semipolar III-nitrides6.5 Substrates, crystal growth and materials issues6.6 Optical waveguides and loss6.7 Fabrication techniques6.8 Nonpolar and semipolar laser history and performance6.9 Future trends6.10 Sources of further information and adviceChapter 7: Advanced self-assembled indium arsenide (InAs) quantum-dot lasersAbstract:7.1 Introduction7.2 High-density and highly uniform InAs quantum dots7.3 Quantum-dot Fabry–Pérot (FP) and distributed-feedback (DFB) lasers for optical communication7.4 Quantum-dot FP and DFB lasers for high-temperature application7.5 QD Laser, Inc7.6 Silicon hybrid quantum-dot lasers7.7 Conclusion7.8 AcknowledgementsChapter 8: Vertical cavity surface emitting lasers (VCSELs)Abstract:8.1 Introduction8.2 Device structure8.3 Vertical cavity surface emitting laser (VCSEL) optical performance8.4 Conclusion8.5 AcknowledgementsChapter 9: Semiconductor disk lasers (VECSELs)Abstract:9.1 Introduction9.2 Principles of operation9.3 Intracavity frequency control9.4 Pulsed operation9.5 Future trends and applications9.6 Sources of further information and adviceChapter 10: Hybrid silicon lasersAbstract:10.1 Introduction10.2 Fundamentals of Si lasers10.3 Hybrid Si laser-based photonic integrated circuits10.4 ConclusionPart III: Mid- and far-infrared lasers and their applicationsChapter 11: Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospectsAbstract:11.1 Introduction11.2 Diode lasers operating below 2.5 μm11.3 Diode lasers for spectral range above 3 μm11.4 Metamorphic GaSb-based diode lasers11.5 AcknowledgementsChapter 12: Interband cascade (IC) lasersAbstract:12.1 Introduction12.2 Operating principle of interband cascade (IC) lasers12.3 Early development and challenges12.4 Recent progress and new developments12.5 Future trends and conclusion12.6 AcknowledgmentsChapter 13: Terahertz (THz) quantum cascade lasersAbstract:13.1 Terahertz quantum cascade laser technology13.2 Waveguides and photonic structures13.3 Stabilisation, microwave modulation and active mode-locking of terahertz quantum cascade lasersChapter 14: Whispering gallery mode lasersAbstract:14.1 Introduction to whispering gallery modes (WGM)14.2 WGM in electrodynamics14.3 Semiconductor WGM lasers14.4 Light extraction from a WGM resonator14.5 Conclusion14.6 AcknowledgementsChapter 15: Tunable mid-infrared laser absorption spectroscopyAbstract:15.1 Introduction15.2 Laser absorption spectroscopic techniques15.3 Quantum-cascade lasers (QCLs) for trace gas detection15.4 Specific examples of QCL-based sensor systems15.5 Conclusions and future trendsIndex