Semiconductor Devices

S. M. Sze, PhD, is UMC Chair Professor in the Electronics Engineering Department at the National Chiao Tung University. His previous books include Semiconductor Devices; Physics of Semiconductor Devices, Second Edition; High-Speed Semiconductor Devices; and Semiconductor Sensors, all available from Wiley.Ming-Kwei Lee, Professor, Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan.

• Preface viiAcknowledgments ixChapter 0 Introduction 10.1 Semiconductor Devices 10.2 Semiconductor Technology 6Summary 12PART I SEMICONDUCTOR PHYSICSChapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium 151.1 Semiconductor Materials 151.2 Basic Crystal Structures 171.3 Valence Bonds 221.4 Energy Bands 231.5 Intrinsic Carrier Concentration 291.6 Donors and Acceptors 34Summary 40Chapter 2 Carrier Transport Phenomena 432.1 Carrier Drift 432.2 Carrier Diffusion 532.3 Generation and Recombination Processes 562.4 Continuity Equation 622.5 Thermionic Emission Process 682.6 Tunneling Process 692.7 Space-Charge Effect 712.8 High-Field Effects 73Summary 77PART II SEMICONDUCTOR DEVICESChapter 3 p-n Junction 823.1 Thermal Equilibrium Condition 833.2 Depletion Region 873.3 Depletion Capacitance 953.4 Current-Voltage Characteristics 993.5 Charge Storage and Transient Behavior 1083.6 Junction Breakdown 1113.7 Heterojunction 117Summary 120Chapter 4 Bipolar Transistors and Related Devices 1234.1 Transistor Action 1244.2 Static Characteristics of Bipolar Transistors 1294.3 Frequency Response and Switching of Bipolar Transistors 1374.4 Nonideal Effects 1424.5 Heterojunction Bipolar Transistors 1464.6 Thyristors and Related Power Devices 149Summary 155Chapter 5 MOS Capacitor and MOSFET 1605.1 Ideal MOS Capacitor 1605.2 SiO2-Si MOS Capacitor 1695.3 Carrier Transport in MOS Capacitors 1745.4 Charge-Coupled Devices 1775.5 MOSFET Fundamentals 180Summary 192Chapter 6 Advanced MOSFET and Related Devices 1956.1 MOSFET Scaling 1956.2 CMOS and BiCMOS 2056.3 MOSFET on Insulator 2106.4 MOS Memory Structures 2146.5 Power MOSFET 223Summary 224Chapter 7 MESFET and Related Devices 2287.1 Metal-Semiconductor Contacts 2297.2 MESFET 2407.3 MODFET 249Summary 255Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices 2588.1 Microwave Frequency Bands 2598.2 Tunnel Diode 2608.3 IMPATT Diode 2608.4 Transferred-Electron Devices 2658.5 Quantum-Effect Devices 2698.6 Hot-Electron Devices 274Summary 277Chapter 9 Light Emitting Diodes and Lasers 2809.1 Radiative Transitions and Optical Absorption 2809.2 Light-Emitting Diodes 2869.3 Various Light-Emitting Diodes 2919.4 Semiconductor Lasers 302Summary 319Chapter 10 Photodetectors and Solar Cells 32310.1 Photodetectors 32310.2 Solar Cells 33610.3 Silicon and Compound-Semiconductor Solar Cells 34310.4 Third-Generation Solar Cells 34810.5 Optical Concentration 352Summary 352PART III SEMICONDUCTOR TECHNOLOGYChapter 11 Crystal Growth and Epitaxy 35711.1 Silicon Crystal Growth from the Melt 35711.2 Silicon Float-Zone Proces 36311.3 GaAs Grystal-Growth Techniques 36711.4 Material Characterization 37011.5 Epitaxial-Growth Techniques 37711.6 Structures and Defects in Epitaxial Layers 384Summary 388Chapter 12 Film Formation 39212.1 Thermal Oxidation 39212.2 Chemical Vapor Deposition of Dielectrics 40012.3 Chemical Vapor Deposition of Polysilicon 40912.4 Atom Layer Deposition 41212.5 Metallization 414Summary 425Chapter 13 Lithography and Etching 42813.1 Optical Lithography 42813.2 Next-Generation Lithographic Methods 44113.3 Wet Chemical Etching 44713.4 Dry Etching 450Summary 462Chapter 14 Impurity Doping 46614.1 Basic Diffusion Process 46714.2 Extrinsic Diffusion 47614.3 Diffusion-Related Processes 48014.4 Range of Implanted Ions 48314.5 Implant Damage and Annealing 49014.6 Implantation-Related Processes 495Summary 501Chapter 15 Integrated Devices 50515.1 Passive Components 50715.2 Bipolar Technology 51115.3 MOSFET Technology 51615.4 MESFET Technology 52915.5 Challenges for Nanoelectronics 532Summary 537APPENDIX A List of Symbols 541APPENDIX B International Systems of Units (SI Units) 543APPENDIX C Unit Prefixes 544APPENDIX D Greek Alphabet 545APPENDIX E Physical Constants 546APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K 547APPENDIX G Properties of Si and GaAs at 300 K 548APPENDIX H Derivation of the Density of States in a Semiconductor 549APPENDIX I Derivation of Recombination Rate for Indirect Recombination 553APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode 555APPENDIX K Basic Kinetic Theory of Gases 557APPENDIX L Answers to Selected Problems 559Photo Credits 563Index 565