HfO2-Based Ferroelectric Materials

Nyhet

Fabrication, Characterization and Device Applications

Inbunden, Engelska, 2026

Av X Lu, Xubing Lu

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provides the ideas of the material properties as well as the working principles of the devices based on HfO2 ferroelectrics.

Produktinformation

Utgivningsdatum2026-06-10
Mått170 x 244 x undefined mm
FormatInbunden
SpråkEngelska
Antal sidor500
FörlagWiley-VCH Verlag GmbH
ISBN9783527353187

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Xubing Lu is a professor in South China Normal University. He received his PhD degree in Physics from Nanjing University in 2002. From 2002 to 2010, he worked as postdoctoral researcher, JSPS research fellow and Humbolt experienced researcher in several universities and research institutions in China and abroad. He has been working at South China Normal University as a full professor since 2010. His research focuses on high-dielectric materials, ferroelectric materials, and their applications in nonvolatile memory devices. Professor Lu has authored over 250 scientific publications, one book chapter, and more than 20 Chinese patents.

Contents Chapter 1 Fundamentals of ferroelectricity and ferroelectric materialsYan Zhang, Xubing Lu, and Jun-ming Liu Chapter 2 Oxygen Vacancy-induced Ferroelectricity in HfO2Chenxi Yu, Fei Liu, and Jinfeng Kang Chapter 3 Origin and Multiple Regulations of Ferroelectric Properties in HfO2-Based MaterialsTian-Ling Ren; Houfang Liu; Dapeng Huang; Yi Yang Chapter 4 Design of HfO2 ferroelectric materials with superlattice-like laminate structureChunlai Luo, Ruiqiang Tao, and Wenwu Li Chapter 5 High energy-efficiency computing applications for HfO2-based ferroelectric materialsXiao Yu and Peiyuan Du, Kechao Tang, Zhiyuan Fu, Jin Luo, Lin Chen, Tianyu Wang, Xueqing Li, Chengji Jin, Jiajia Chen, Huan Liu, Yan Liu, and Genquan Han Chapter 6 1T1C HfO2 FeRAM MaterialsHitoshi Saito and Takashi Eshita Chapter 7 3D Ferroelectric Capacitor Memories for Data-Centric ComputingJiahui Duan and Kai Ni Chapter 8 Basic Mechanism of Si-channel HfO2-FeFET and its reliabilityReika Ichihara, Masumi Saitoh Chapter 9 Reliability of the Hafnia-based Ferroelectric MemoryWei Wei, Xuedong Zhao, and Qing Luo Chapter 10 Reliability of HfO2-based ferroelectric thin films and field-effect transistorsMin Liao, Binjian Zeng, Shuaibing Gao, and Yichun Zhou Chapter 11 Hafnia-based Materials for Neuromorphic DevicesHai Zhong, Kui-juan Jin, and Chen Ge Chapter 12 HfO2-based ferroelectric tunnel junctionsZheng Wen Chapter 13 HfO2-based Ferroelectric Materials for Energy Storage ApplicationsWentao Shuai and Jiyan Dai Chapter 14 HfO2-based Ferroelectric Materials for Piezoelectric ApplicationsGuoliang Yuan