Adrian Kitai, PhD, is Professor in the Departments of Materials Science and Engineering and Engineering Physics at McMaster University, Ontario, Canada. He has researched and published widely on semiconductor materials and devices for optoelectronics, and has industry experience as founder of two companies in the fields of electronics and optical materials.

• Acknowledgments xPreface xiAbout the Companion Website xivChapter 1 Introduction to Quantum Mechanics 11.1 Introduction 21.2 The Classical Electron 21.3 Two-Slit Electron Experiment 41.4 The Photoelectric Effect 81.5 Wave-Packets and Uncertainty 111.6 The Wavefunction 131.7 The Schrödinger Equation 151.8 The Electron in a One-Dimensional Well 191.9 The Hydrogen Atom 251.10 Electron Transmission and Reflection at Potential Energy Step 301.11 Spin 321.12 The Pauli Exclusion Principle 351.13 Operators and the Postulates of Quantum Mechanics 361.14 Expectation Values and Hermitian Operators 381.15 Summary 40Problems 42Note 45Suggestions for Further Reading 45Chapter 2 Semiconductor Physics 462.1 Introduction 472.2 The Band Theory of Solids 482.3 Bloch Functions 492.4 The Kronig–Penney Model 522.5 The Bragg Model 572.6 Effective Mass in Three Dimensions 592.7 Number of States in a Band 612.8 Band Filling 632.9 Fermi Energy and Holes 652.10 Carrier Concentration 662.11 Semiconductor Materials 782.12 Semiconductor Band Diagrams 802.13 Direct Gap and Indirect Gap Semiconductors 822.14 Extrinsic Semiconductors 862.15 Carrier Transport in Semiconductors 912.16 Equilibrium and Nonequilibrium Dynamics 952.17 Carrier Diffusion and the Einstein Relation 982.18 Quasi-Fermi Energies 1012.19 The Diffusion Equation 1042.20 Traps and Carrier Lifetimes 1072.21 Alloy Semiconductors 1112.23 Summary 114Problems 116Suggestions for Further Reading 122Chapter 3 The p-n Junction Diode 1233.1 Introduction 1243.2 Diode Current 1253.3 Contact Potential 1303.4 The Depletion Approximation 1323.5 The Diode Equation 1413.6 Reverse Breakdown and the Zener Diode 1533.7 Tunnel Diodes 1563.8 Generation/Recombination Currents 1583.9 Metal-Semiconductor Junctions 1613.10 Heterojunctions 1723.11 Alternating Current (AC) and Transient Behavior 1733.12 Summary 176Problems 177Note 181Suggestions for Further Reading 181Chapter 4 Photon Emission and Absorption 1824.1 Introduction to Luminescence and Absorption 1834.2 Physics of Light Emission 1844.3 Simple Harmonic Radiator 1874.4 Quantum Description 1884.5 The Exciton 1924.6 Two-Electron Atoms and the Exchange Interaction 1954.7 Molecular Excitons 2024.8 Band-to-Band Transitions 2054.9 Photometric Units 2104.10 Summary 214Problems 215Note 219Suggestions for Further Reading 219Chapter 5 Semiconductor Devices Based on the p-n Junction 2205.1 Introduction 2215.2 The p-n Junction Solar Cell 2225.3 Light Absorption 2245.4 Solar Radiation 2265.5 Solar Cell Design and Analysis 2275.6 Solar Cell Efficiency Limits and Tandem Cells 2345.7 The Light Emitting Diode 2365.8 Emission Spectrum 2395.9 Non-Radiative Recombination 2405.10 Optical Outcoupling 2415.11 GaAs LEDs 2445.12 GaP:N LEDs 2455.13 Double Heterojunction Al X Ga 1−x as Leds 2465.14 AlGaInP LEDs 2515.15 Ga 1−x in X N Leds 2535.16 Bipolar Junction Transistor 2575.17 Junction Field Effect Transistor 2665.18 BJT and JFET Symbols and Applications 2705.19 Summary 271Problems 274Further Reading 282Chapter 6 The Metal Oxide Semiconductor Field Effect Transistor 2836.1 Introduction to the MOSFET 2846.2 MOSFET Physics 2866.3 MOS Capacitor Analysis 2886.4 Accumulation Layer and Inversion Layer Thicknesses 2976.5 Capacitance of MOS Capacitor 3016.6 Work Functions, Trapped Charges, and Ion Beam Implantation 3036.7 Surface Mobility 3046.8 MOSFET Transistor Characteristics 3076.9 MOSFET Scaling 3126.10 Nanoscale Photolithography 3136.11 Ion Beam Implantation 3216.12 MOSFET Fabrication 3236.13 CMOS Structures 3286.14 Threshold Voltage Adjustment 3296.15 Two-Dimensional Electron Gas 3316.16 Modeling Nanoscale MOSFETs 3366.17 Flash Memory 3386.18 Tunneling 3406.19 Summary 348Problems 350Notes 352Recommended Reading 352Chapter 7 The Quantum Dot 3537.1 Introduction and Overview 3547.2 Quantum Dot Semiconductor Materials 3567.3 Synthesis of Quantum Dots 3577.4 Quantum Dot Confinement Physics 3637.5 Franck-Condon Principle and the Stokes Shift 3697.6 The Quantum Mechanical Oscillator 3767.7 Vibronic Transitions 3797.8 Surface Passivation 3837.9 Auger Processes 3897.10 Biological Applications of Quantum Dots 3967.11 Summary 397Problems 398Recommended Reading 399Chapter 8 Organic Semiconductor Materials and Devices 4008.1 Introduction to Organic Electronics 4018.2 Conjugated Systems 4028.3 Polymer OLEDs 4088.4 Small-Molecule OLEDs 4138.5 Anode Materials 4178.6 Cathode Materials 4178.7 Hole Injection Layer 4188.8 Electron Injection Layer 4208.9 Hole Transport Layer 4208.10 Electron Transport Layer 4228.11 Light Emitting Material Processes 4248.12 Host Materials 4268.13 Fluorescent Dopants 4288.14 Phosphorescent and Thermally Activated Delayed Fluorescence Dopants 4308.15 Organic Solar Cells 4348.16 Organic Solar Cell Materials 4398.17 The Organic Field Effect Transistor 4438.18 Summary 446Problems 450Notes 455Suggestions for Further Reading 455Chapter 9 One- and Two-Dimensional Semiconductor Materials and Devices 4569.1 Introduction 4579.2 Linear Combination of Atomic Orbitals 4589.3 Density Functional Theory 4659.4 Transition Metal Dichalcogenides 4679.5 Multigate MOSFETs 4729.6 Summary 476Problems 477Recommended Reading 478Appendix 1: Physical Constants 479Appendix 2: Derivation of the Uncertainty Principle 480Appendix 3: Derivation of Group Velocity 484Appendix 4: Reduced Mass 486Appendix 5: The Boltzmann Distribution Function 488Appendix 6: Properties of Semiconductor Materials 494Appendix 7: Calculation of the Bonding and Antibonding Orbital Energies Versus Interproton Separation for the Hydrogen Molecular Ion 496Index 501