Charge-Based MOS Transistor Modeling

Christian C. Enz and Eric A. Vittoz are the authors of Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design, published by Wiley.

• Foreword. Preface.List of Symbols.1. Introduction.1.1 The Importance of Device Modeling for IC Design.1.2 A Short History of the EKV MOST Model.1.3 The Book Structure.PART I: THE BASIC LONG-CHANNELINTRINSIC CHARGE-BASED MODEL.2. Introduction.2.1 The N-channel Transistor Structure.2.2 Definition of charges, current, potential and electric fields.2.3 Transistor symbol and P-channel transistor.3. The Basic Charge Model.3.1 Poisson’s Equation and Gradual Channel Approximation.3.2 Surface potential as a Function of Gate Voltage.3.3 Gate Capacitance.3.4 Charge Sheet Approximation.3.5 Density of Mobile Inverted Charge.3.6 Charge-Potential Linearization.4. Static Drain Current.4.1 Drain Current Expression.4.2 Forward and Reverse Current Components.4.3 Modes of Operation.4.4 Model of Drain Current Based on Charge Linearization.4.5 Fundamental Property: Validity and Application.4.6 Channel Length Modulation.5. The Small-Signal Model.5.1 The Static Small-Signal Model.5.2 A General Non-Quasi-Static Small-Signal Model.5.3 The Quasi-Static Dynamic Small-Signal Model.6. The Noise Model.6.1 Noise Calculation Methods.6.2 Low-Frequency Channel Thermal Noise.6.3 Flicker Noise.6.4 Appendices.Appendix : The Nyquist and Bode Theorems.Appendix : General Noise Expression.7. Temperature Effects and Matching.7.1 Introduction.7.2 Temperature Effects.PART II: THE EXTENDED CHARGE-BASED MODEL.8. Non-Ideal Effects Related to the Vertical Dimension.8.1 Introduction.8.2 Mobility Reduction Due to the Vertical Field.8.3 Non-Uniform Vertical Doping.8.4 Polysilicon Depletion.8.4.1 Definition of the Effect.8.5 Band Gap Widening.8.6 Gate Leakage Current.9. Short-Channel Effects.9.1 Velocity Saturation.9.2 Channel Length Modulation.9.3 Drain Induced Barrier Lowering.9.4 Short-Channel Thermal Noise Model.10. The Extrinsic Model.10.1 Extrinsic Part of the Device.10.2 Access Resistances.10.3 Overlap Regions.10.4 Source and Drain Junctions.10.5 Extrinsic Noise Sources.PART III: THE HIGH-FREQUENCY MODEL.11. Equivalent Circuit at RF.11.1 RF MOS Transistor Structure and Layout.11.2 What Changes at RF?.11.3 Transistor Figures of Merit.11.4 Equivalent Circuit at RF.12. The Small-Signal Model at RF.12.1 The Equivalent Small-Signal Circuit at RF.12.2 Y-Parameters Analysis.12.3 The Large-Signal Model at RF.13. The Noise Model at RF.13.1 The HF Noise Parameters.13.2 The High-Frequency Thermal Noise Model.13.3 HF Noise Parameters of a Common-Source Amplifier.References.Index.